| 1. |
- Dong, Y. B., et al.
(författare)
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Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO 2 toward all-carbon electronics
- 2018
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 6:2
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Tidskriftsartikel (refereegranskat)abstract
- A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
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| 2. |
- Dong, Yibo, et al.
(författare)
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Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst
- 2018
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 29:36
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Tidskriftsartikel (refereegranskat)abstract
- Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.
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