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Sökning: WFRF:(Volkov P) > Jönköping University

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1.
  • Kalaboukhov, Alexei, 1975, et al. (författare)
  • Electrical and structural properties of ABO3/SrTiO3 interfaces
  • 2012
  • Ingår i: Materials Research Society Symposium Proceedings. - Warrendale, Pa. : Springer Science and Business Media LLC. - 0272-9172. - 9781605114316 ; 1454, s. 167-172, s. 167-172
  • Konferensbidrag (refereegranskat)abstract
    • Electrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2 terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.
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2.
  • Kalaboukhov, Alexei, 1975, et al. (författare)
  • Inhomogeneous Microstructure and Electrical Transport Properties at the LaAlO3/SrTiO3 Interface
  • 2012
  • Ingår i: Japanese Journal of Applied Physics. - 1347-4065 .- 0021-4922. ; 51:11(spec.issue), s. article no. 11PG10 -
  • Tidskriftsartikel (refereegranskat)abstract
    • Medium-energy ion spectroscopy (MEIS), scanning transmission electron microscopy (STEM) and X-ray photoemission spectroscopy (XPS) were used to investigate the composition and microstructure of LaAlO3/SrTiO3 (LAO/STO) interfaces grown by pulsed laser deposition of LAO on TiO2-terminated STO substrates under different oxidizing conditions. MEIS and XPS indicated Sr/La and Al/Ti intermixing within several atomic layers at all studied interfaces. XPS and STEM revealed that La diffuses deeper than Al. Analysis of the MEIS data suggests inhomogeneous lateral distribution of the diffused elements. This is further supported by the observation of a large positive magneto-resistance at low temperatures. We discuss the role of lateral inhomogeneities on the formation of the electron gas at the LAO/STO interface.
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