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Träfflista för sökning "WFRF:(Wang Min) ;lar1:(cth)"

Sökning: WFRF:(Wang Min) > Chalmers tekniska högskola

  • Resultat 1-10 av 366
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1.
  • 2019
  • Tidskriftsartikel (refereegranskat)
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2.
  • Wang, Zhongqiang, et al. (författare)
  • Realizing 18.03% efficiency and good junction characteristics in organic solar cells via hydrogen-bonding interaction between glucose and ZnO electron transport layers
  • 2022
  • Ingår i: Journal of Materials Chemistry A. - : Royal Society of Chemistry (RSC). - 2050-7488 .- 2050-7496. ; 11:4, s. 1810-1816
  • Tidskriftsartikel (refereegranskat)abstract
    • Electron transport layers (ETLs) with excellent electron extraction capability are essential for realizing high efficiency in organic solar cells (OSCs). A sol-gel-processed ZnO ETL is widely used in OSCs due to its high mobility and suitable work function. However, the existence of defects usually results in low photovoltaic performance during the operation of OSCs. In this work, glucose (Gl) was used to passivate free OH traps via hydrogen-bonding interaction and formed ZnO/Gl ETLs with ZnO, which exhibited improved electron extraction capability and reduced trap defect density. Thus, a champion efficiency of 18.03% was obtained in a PM6:Y6 light absorber-based cell, which is >11% higher than that of the reference cell (16.15%) with a pristine ZnO ETL. Impressive enhancements by >11% were also observed in different fullerene and non-fullerene light absorber-based cells relative to that of the reference cell. This study demonstrates a new strategy to design ETLs for realizing high efficiency in OSCs.
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3.
  • Wu, Xiaoyan, et al. (författare)
  • Anomalous photoluminescence in InP1-xBix
  • 2016
  • Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6, s. Art. no. 27867-
  • Tidskriftsartikel (refereegranskat)abstract
    • Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 ?m in optical coherent tomography (OCT).
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4.
  • Gelczuk, L., et al. (författare)
  • Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys
  • 2016
  • Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 49:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap with the activation energy of 0.45-0.47 eV and one acceptor-like trap with activation energy of 0.08 eV have been identified in DLTS measurements. For the reference sample (InP grown at the same temperature), the deep donor trap has also been observed, while the acceptor trap was not detected. According to the literature, the deep donor level found in InP(Bi) at 0.45-0.47 eV below the conduction band has been attributed to the isolated P-In defect, while the second trap, which is observed only for Bi containing samples at 0.08 eV above the valence band can be attributed to Bi clusters in InPBi. This acceptor level was proposed to be responsible for the observed partial compensation of native free electron density in InPBi layers. It is also shown that the deep donor traps are active in photoluminescence (PL). A strong radiative recombination between donor traps and the valence band are observed in PL spectra at energy 0.6-0.8 eV, i.e. similar to 0.47 eV below the energy gap of InPBi, which is determined by contactless electroreflectance.
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5.
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7.
  • Krammel, C. M., et al. (författare)
  • Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
  • 2017
  • Ingår i: Physical Review Materials. - 2475-9953. ; 1:3
  • Tidskriftsartikel (refereegranskat)abstract
    • We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.
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8.
  • Pan, Wenwu, et al. (författare)
  • Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
  • 2017
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 32:1
  • Tidskriftsartikel (refereegranskat)abstract
    • InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm
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9.
  • Pan, W. W., et al. (författare)
  • Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
  • 2016
  • Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388. ; 656, s. 777-783
  • Tidskriftsartikel (refereegranskat)abstract
    • The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source molecular beam epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source molecular beam epitaxy.
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10.
  • Pan, W. W., et al. (författare)
  • Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
  • 2015
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
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