| 1. |
- Liu, Jun, et al.
(author)
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Regulation of Humoral Immune Responses and B Cell Tolerance by the IgM Fc Receptor (FcμR)
- 2020
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In: B Cells In Immunity And Tolerance. - Singapore : Springer. - 9789811535321 - 9789811535314 ; , s. 75-86
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Book chapter (peer-reviewed)abstract
- Immunoglobulin (Ig) M is the first antibody isotype produced during an immune response and is critical for host defense against infections. Recent studies have revealed that IgM also plays an important role in immune regulation and immunological tolerance. Mice lacking secretory IgM not only exhibit impaired production of antigen-specific IgG and are more susceptible to bacterial and viral infections, but also produce autoantibodies and are prone to develop autoimmune diseases. For many years, IgM has been thought to function predominantly by binding to antigen and activating complement (C') system. It is now clear that IgM can also elicit its function through the IgM Fc receptor (Fc mu R). In this chapter, we will review the role of Fc mu R in B cell development, maturation, survival and activation, antibody production, host defense against bacterial and viral infections, and B cell tolerance. We will also discuss the relative contribution of IgM-C' and IgM-Fc mu R pathways in humoral immune responses. Finally, we will discuss the possible involvement of Fc mu R in human chronic lymphocytic leukemia.
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| 2. |
- Wang, L, et al.
(author)
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Bismuth-Related Nanostructures
- 2019
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In: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 181-199
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Book chapter (other academic/artistic)abstract
- Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures.
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| 3. |
- Guina, M., et al.
(author)
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MBE of dilute-nitride optoelectronic devices
- 2013
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In: Molecular Beam Epitaxy. - 9780123878397 ; , s. 171-187
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Book chapter (other academic/artistic)abstract
- Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its unique place as a key technology, which enables the development of new types of optoelectronics devices. This chapter begins by reviewing the technological particularities related to incorporation of nitrogen into III–V materials when using plasma-assisted molecular beam epitaxy. We then focus on describing the interplay between the growth parameters and nitrogen incorporation processes in dilute-nitride arsenides (III-N–As). Emphasis is laid on nitrogen-related growth kinetics that is accompanied by various bonding configurations and formation of several types of defects. An overview is provided also for dilute-nitride antimonides (III-N–Sb) and dilute-nitride phosphides (III-N–P). Finally, we review the growth optimisation and properties of several classes of dilute-nitride heterostructures for optoelectronics. These include uncooled long-wavelength laser diodes, SESAMs, VECSELs, enabling yellow emission by frequency doubling, and high-efficiency multijunction solar cells for concentrated photovoltaic systems.
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| 4. |
- Krammel, C. M., et al.
(author)
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Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning
- 2019
-
In: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 215-229
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Book chapter (other academic/artistic)abstract
- The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP1−xBix/InP quantum well with a Bi concentration of 2.4 % is discussed.
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| 5. |
- Li, Gang, et al.
(author)
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Quantum Spin Hall States in 2D Bismuth-Based Materials
- 2019
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In: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 351-379
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Book chapter (other academic/artistic)abstract
- Berrys phase, an inherent constituent of the electronic wave functions, has revolutionarily enriched our understanding of the fundamental states of matter and has triggered the discovery of many interesting phenomena in condensed matter physics, such as quantum charge/spin pumping, polarization, topological insulating phase, etc. Among them, the discovery of the two-dimensional (2D) quantum spin Hall (QSH) states protected by time-reversal symmetry (TRS) boosts the wide interest in the study of topological materials in the past decade. These include the 2D quantum anomalous Hall states (QAH), three-dimensional topological insulators (TIs), Dirac semimetals (SM), and topological nodal-line SMs as well as Weyl SMs. This article by no means can cover everything of this rapidly developing field, we rather focus on the bismuth-based honeycomb materials hosting large-gap QSH/QAH states, which promise applications for room-temperature spintronic. We will explain their topological mechanisms in terms of Berrys phase and topological invariant. After introducing a concrete material example which has been successfully grown in experiment, e.g., Bi/SiC(0001), various theoretical proposals on atom substitution and functionalization based on bismuth honeycomb lattice will then be discussed, from which a general designing principle for achieving large topological gaps can be summarized. This article hopes to stimulate more experimental activities toward the examination of large-gap QSH/QAH theoretical proposals and the potential applications in spintronic devices.
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| 6. |
- Song, Yuxin, 1981, et al.
(author)
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Dilute Bismides for Mid-IR Applications
- 2013
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In: Springer Series in Materials Science. - New York, NY : Springer New York. - 2196-2812 .- 0933-033X. - 9781461481218 ; 186, s. 1-27
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Book chapter (other academic/artistic)abstract
- Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb1−x Bi x , InSb1 − x Bi x , InAs1 − x Bi x , and InAsSbBi. Although these dilute bismides have been successfully grown, to obtain high Bi incorporations and retain high crystal quality is still very challenging.
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| 7. |
- Song, Yuxin, 1981, et al.
(author)
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Metamorphic Quantum Well Lasers
- 2012
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In: Lattice Engineering: Technology and Applications. ; , s. 283-317
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Book chapter (other academic/artistic)abstract
- This chapter provides an overview of long wavelengthmetamorphic quantum well lasers. The idea of metamorphic growth is to compromise large lattice mismatch by utilizing a relaxed buffer layer. Structural design and growth optimization of metamorphic buffer layers are reviewed with emphasis on composition grading scheme and doping effects. Progress on long wavelength (>1.2 μm) metamorphic quantum well lasers is summarized.
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| 8. |
- Wang, Shu Min, 1963
(author)
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Compliant Substrate
- 2012
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In: Lattice Engineering Technology and Applications. - : Pan Stanford Publishing. - 9789814316293 ; , s. 63-97
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Book chapter (other academic/artistic)abstract
- This chapter provides an overview of compliant substrate, its theoretical concept, and practical implementation methods. The concept was originally proposed to offer a versatile technology beyond the limitation of lattice mismatch that has been encountered in most heterostructures. Different fabrication schemes to prepare compliant substrates in various materials are reviewed and assessed. Although there have been plenty of evidence showing reduction of threading dislocations (TDs) using a compliant substrate, its physical origin is still under debate.
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| 9. |
- Wang, Shu Min, 1963, et al.
(author)
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Dilute bismide and nitride alloys for mid-IR optoelectronic devices
- 2019
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In: Mid-infrared Optoelectronics: Materials, Devices, and Applications. ; , s. 457-492
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Book chapter (other academic/artistic)abstract
- Dilute bismide and nitride provide flexible bandgap and strain engineering, owing to their unique physical properties, and are attractive for mid-IR (2-12 µm) optoelectronic device applications. In this chapter, we review progresses of theoretical simulations, epitaxial growth, material characterizations, and devices of dilute bismides including GaSbBi, AlSbBi, InAsBi, InAsSbBi, InGaAsBi, and InSbBi, as well as dilute nitrides including InNAs, GaNSb, InNSb, GaInNAs, and InNAsSb. The overview mainly focuses on growth optimization, optical characterizations, and theoretical calculations ending with outlook remarks about advantages and main challenges of both exotic materials.
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| 10. |
- Wang, Shu Min, 1963, et al.
(author)
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Phosphorus and Nitrogen Containing Dilute Bismides
- 2019
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In: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 97-123
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Book chapter (other academic/artistic)abstract
- Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.
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