| 1. |
- Fenstermacher, M.E., et al.
(författare)
-
DIII-D research advancing the physics basis for optimizing the tokamak approach to fusion energy
- 2022
-
Ingår i: Nuclear Fusion. - : IOP Publishing. - 0029-5515 .- 1741-4326. ; 62:4
-
Tidskriftsartikel (refereegranskat)abstract
- DIII-D physics research addresses critical challenges for the operation of ITER and the next generation of fusion energy devices. This is done through a focus on innovations to provide solutions for high performance long pulse operation, coupled with fundamental plasma physics understanding and model validation, to drive scenario development by integrating high performance core and boundary plasmas. Substantial increases in off-axis current drive efficiency from an innovative top launch system for EC power, and in pressure broadening for Alfven eigenmode control from a co-/counter-I p steerable off-axis neutral beam, all improve the prospects for optimization of future long pulse/steady state high performance tokamak operation. Fundamental studies into the modes that drive the evolution of the pedestal pressure profile and electron vs ion heat flux validate predictive models of pedestal recovery after ELMs. Understanding the physics mechanisms of ELM control and density pumpout by 3D magnetic perturbation fields leads to confident predictions for ITER and future devices. Validated modeling of high-Z shattered pellet injection for disruption mitigation, runaway electron dissipation, and techniques for disruption prediction and avoidance including machine learning, give confidence in handling disruptivity for future devices. For the non-nuclear phase of ITER, two actuators are identified to lower the L-H threshold power in hydrogen plasmas. With this physics understanding and suite of capabilities, a high poloidal beta optimized-core scenario with an internal transport barrier that projects nearly to Q = 10 in ITER at ∼8 MA was coupled to a detached divertor, and a near super H-mode optimized-pedestal scenario with co-I p beam injection was coupled to a radiative divertor. The hybrid core scenario was achieved directly, without the need for anomalous current diffusion, using off-axis current drive actuators. Also, a controller to assess proximity to stability limits and regulate β N in the ITER baseline scenario, based on plasma response to probing 3D fields, was demonstrated. Finally, innovative tokamak operation using a negative triangularity shape showed many attractive features for future pilot plant operation.
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
- Yan, J.Y, et al.
(författare)
-
MBE synthesis of graphene using CBr4
- 2013
-
Ingår i: The 17th European Workshop on Molecular Beam Epitaxy, Levi, Finland, 2013.
-
Konferensbidrag (refereegranskat)
|
|
| 5. |
- Yue, L., et al.
(författare)
-
Novel InGaPBi single crystal grown by molecular beam epitaxy
- 2015
-
Ingår i: Applied Physics Express. - : IOP Publishing. - 1882-0786 .- 1882-0778. ; 8:4, s. Art. no. 041201-
-
Tidskriftsartikel (refereegranskat)abstract
- InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.
|
|
| 6. |
|
|
| 7. |
- Chen, Q. M., et al.
(författare)
-
A new route toward light emission from Ge: tensile-strained quantum dots
- 2015
-
Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:19, s. 8725-8730
-
Tidskriftsartikel (refereegranskat)abstract
- The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the QDs is found to be non-uniform and the shear component plays a significant role in the energy band structure, leading to larger required hydrostatic strain than that in the Ge thin films under biaxial strain to become a direct band gap.
|
|
| 8. |
- Pan, W. W., et al.
(författare)
-
Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
- 2016
-
Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388. ; 656, s. 777-783
-
Tidskriftsartikel (refereegranskat)abstract
- The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source molecular beam epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source molecular beam epitaxy.
|
|
| 9. |
- Pan, W. W., et al.
(författare)
-
Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
- 2015
-
Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 30:9
-
Tidskriftsartikel (refereegranskat)abstract
- Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
|
|
| 10. |
|
|
