SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Wang Shu Min 1963) "

Sökning: WFRF:(Wang Shu Min 1963)

Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  •  
2.
  • Wu, XY, et al. (författare)
  • Anomalous photoluminescence in InP1-xBix
  • 2016
  • Ingår i: 19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016.
  • Konferensbidrag (refereegranskat)
  •  
3.
  • Wu, Xiaoyan, et al. (författare)
  • Anomalous photoluminescence in InP1-xBix
  • 2016
  • Ingår i: Scientific Reports. - 2045-2322. ; 6, s. Art. no. 27867-
  • Tidskriftsartikel (refereegranskat)abstract
    • Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 ?m in optical coherent tomography (OCT).
  •  
4.
  • Zhao, Qingxiang, 1962, et al. (författare)
  • Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy
  • 2006
  • Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 89
  • Tidskriftsartikel (refereegranskat)abstract
    • GaNAs/GaAs quantum wells with high N concentrations, grown by molecular beam epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high resolution x-ray diffraction (XRD), and photoluminescence (PL) measurements. The substitutional N concentration in an 18 nm thick strained GaNAs layer varies from 1.4% to 5.9% when the growth rate is reduced from 1 to 0.2 µm/h. By further reducing the growth rate, more N can be incorporated but relaxation occurs. Both the total N concentration, deduced from SIMS measurements, and the substitutional N concentration, deduced from XRD measurements, increase with reduced growth rate. By comparing the SIMS and XRD results, we found that a large amount of N was not in substitutional position when the substitutional N concentration is high (>4%). The experimental results also show that there is no detectable change of total and substitutional N concentrations, within the instrument resolutions, after rapid thermal annealing at 700 °C for 30 s. However, PL measurements show a strong blueshift of the emission wavelength after annealing and the PL intensity increases by more than one order of magnitude.
  •  
5.
  • Zhao, Qingxiang, 1962, et al. (författare)
  • Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
  • 2005
  • Ingår i: Physics Letters A. - : Elsevier Science B.V., Amsterdam.. - 0375-9601 .- 1873-2429. ; 341
  • Tidskriftsartikel (refereegranskat)abstract
    • The radiative recombination in InxGa1−xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.
  •  
6.
  • Gelczuk, L., et al. (författare)
  • Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys
  • 2016
  • Ingår i: Journal of Physics D: Applied Physics. - 0022-3727. ; 49:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap with the activation energy of 0.45-0.47 eV and one acceptor-like trap with activation energy of 0.08 eV have been identified in DLTS measurements. For the reference sample (InP grown at the same temperature), the deep donor trap has also been observed, while the acceptor trap was not detected. According to the literature, the deep donor level found in InP(Bi) at 0.45-0.47 eV below the conduction band has been attributed to the isolated P-In defect, while the second trap, which is observed only for Bi containing samples at 0.08 eV above the valence band can be attributed to Bi clusters in InPBi. This acceptor level was proposed to be responsible for the observed partial compensation of native free electron density in InPBi layers. It is also shown that the deep donor traps are active in photoluminescence (PL). A strong radiative recombination between donor traps and the valence band are observed in PL spectra at energy 0.6-0.8 eV, i.e. similar to 0.47 eV below the energy gap of InPBi, which is determined by contactless electroreflectance.
  •  
7.
  •  
8.
  •  
9.
  • Krammel, C. M., et al. (författare)
  • Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
  • 2017
  • Ingår i: Physical Review Materials. - 2475-9953. ; 1:3
  • Tidskriftsartikel (refereegranskat)abstract
    • We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.
  •  
10.
  • Pan, Wenwu, et al. (författare)
  • Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
  • 2017
  • Ingår i: Semiconductor Science and Technology. - 1361-6641 .- 0268-1242. ; 32:1
  • Tidskriftsartikel (refereegranskat)abstract
    • InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm
  •  
Skapa referenser, mejla, bekava och länka

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy