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Sökning: WFRF:(Wang Shu Min 1963) > Övrigt vetenskapligt/konstnärligt

  • Resultat 1-10 av 29
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1.
  • Wang, L, et al. (författare)
  • Bismuth-Related Nanostructures
  • 2019
  • Ingår i: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 181-199
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
    • Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures.
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  • Guina, M., et al. (författare)
  • MBE of dilute-nitride optoelectronic devices
  • 2013
  • Ingår i: Molecular Beam Epitaxy. - 9780123878397 ; , s. 171-187
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
    • Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its unique place as a key technology, which enables the development of new types of optoelectronics devices. This chapter begins by reviewing the technological particularities related to incorporation of nitrogen into III–V materials when using plasma-assisted molecular beam epitaxy. We then focus on describing the interplay between the growth parameters and nitrogen incorporation processes in dilute-nitride arsenides (III-N–As). Emphasis is laid on nitrogen-related growth kinetics that is accompanied by various bonding configurations and formation of several types of defects. An overview is provided also for dilute-nitride antimonides (III-N–Sb) and dilute-nitride phosphides (III-N–P). Finally, we review the growth optimisation and properties of several classes of dilute-nitride heterostructures for optoelectronics. These include uncooled long-wavelength laser diodes, SESAMs, VECSELs, enabling yellow emission by frequency doubling, and high-efficiency multijunction solar cells for concentrated photovoltaic systems.
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10.
  • Krammel, C. M., et al. (författare)
  • Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning
  • 2019
  • Ingår i: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 215-229
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
    • The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP1−xBix/InP quantum well with a Bi concentration of 2.4 % is discussed.
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  • Resultat 1-10 av 29

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