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- Wang, Shu Min, 1963, et al.
(författare)
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Progress on III-V-Bi Alloys and Light Emitting Devices
- 2018
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Ingår i: International Conference on Transparent Optical Networks. - 2162-7339. ; 2018-July
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Konferensbidrag (refereegranskat)abstract
- In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.
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- Zhang, L, et al.
(författare)
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Nanoscale Distribution of Bismuth in InPBi
- 2015
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Ingår i: 6th International Workshop on Bismuth Containing Semiconductors, Madison, USA, July 19th-22nd, 2015.
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Konferensbidrag (refereegranskat)
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- Zhang, L, et al.
(författare)
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Nanoscale Distribution of Bismuth in InPBi
- 2016
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Ingår i: International Conference on Semiconductor Mid-IR Materials and Optics (SMMO) 2016, Lisbon, Portugal, March 21-24, 2016.
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Konferensbidrag (refereegranskat)
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- Chen, Q, et al.
(författare)
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Photoluminescence from tensile-strained Ge quantum dots
- 2016
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Ingår i: The 2016 IEEE Summer Topical Meeting Series, SUM 2016, Newport Beach, USA, July 11th-13th, 2016. - 9781509019007 ; , s. 120-121
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Konferensbidrag (refereegranskat)abstract
- It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge [1], which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si [2, 3]. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge [4]. In this work, we chose In0.52Al0.48As, which is lattice matched to InP, as barrier layer and grew the structure by molecular beam epitaxy (MBE). Photoluminescence (PL) was successfully achieved at room temperature.
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