| 1. |
- Wu, Xiaoyan, et al.
(författare)
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Anomalous photoluminescence in InP1-xBix
- 2016
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6, s. Art. no. 27867-
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Tidskriftsartikel (refereegranskat)abstract
- Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 ?m in optical coherent tomography (OCT).
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| 2. |
- Pan, Wenwu, et al.
(författare)
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Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
- 2017
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 32:1
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Tidskriftsartikel (refereegranskat)abstract
- InxGa1-xAs/GaAs1-yBiy/InxGa1-xAs (0.20 ≤x ≤0.22, 0.035 ≤y ≤0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k • p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm
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| 3. |
- Liu, Juanjuan, et al.
(författare)
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Electrically injected GaAsBi/GaAs single quantum well laser diodes
- 2017
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 7:11, s. Article Number: 115006 -
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Tidskriftsartikel (refereegranskat)abstract
- We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77?150 K, and reduced to 90 K in the range of 150?273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77?273 K.
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| 4. |
- Wang, Chang, et al.
(författare)
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Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model
- 2018
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Ingår i: Chinese Physics Letters. - 0256-307X .- 1741-3540. ; 35:5
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Tidskriftsartikel (refereegranskat)abstract
- Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k . p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 mu m lasers at room temperature because they can easily be used to obtain 1.3 mu m for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.
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| 5. |
- Wang, L, et al.
(författare)
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Influence of Bi on morphology and optical properties of InAs QDs
- 2017
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Ingår i: Optical Materials Express. - 2159-3930. ; 7:12, s. 4249-4257
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Tidskriftsartikel (refereegranskat)abstract
- We study the tsurface morphology and photoluminescence (PL) property of InAs quantum dots (QDs) on GaAs using bismuth (Bi) in the layer prior to or after the growth of QDs. Incorporating Bi in the layer prior to the QD deposition delays the onset of InAs QD formation resulting in a decrease in QD height and density. As a surfactant, adding Bi in the GaAs capping layer at a high growth temperature reduces the In surface diffusion length leading to uniform and well preserved InAs QDs in terms of height and density. The incorporation of 3% Bi at a low growth temperature, which forms a GaAsBi capping layer, can effectively lower the PL transition energy up to 163 meV and reduce the PL linewidth, leading to an emission wavelength of 1.365 ?m at 77 K.
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| 6. |
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| 7. |
- Chen, X, et al.
(författare)
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Negative thermal quenching of below-bandgap photoluminescence in InPBi
- 2017
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 110:5
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Tidskriftsartikel (refereegranskat)abstract
- This paper reports a temperature-dependent (10-280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP1- xBix (x = 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra, of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up, while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping, and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. © 2017 Author(s).
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| 8. |
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| 9. |
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| 10. |
- Wang, Shu Min, 1963, et al.
(författare)
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Electrically pumped GaAsBi laser diodes
- 2017
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Ingår i: International Conference on Transparent Optical Networks. - 2162-7339. - 9781538608586
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 μm at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm-1. The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.
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