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| 2. |
- Wang, L, et al.
(författare)
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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
- 2017
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Ingår i: Crystals. - : MDPI AG. - 2073-4352. ; 7:3, s. Article no 63 -
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Forskningsöversikt (refereegranskat)abstract
- Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.
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| 3. |
- Yan, Bing, et al.
(författare)
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Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
- 2019
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 114:5
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Tidskriftsartikel (refereegranskat)abstract
- Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of Bi is yet to be well clarified. We in this letter investigate the effect of Bi incorporation on the band-tail states in GaAs 1−x Bi x by excitation power- and magnetic field-dependent photoluminescence (PL) measurements at low temperatures. Three PL features are identified from a broad PL peak, which blue-shift monotonically with the increase in excitation power. None of the PL features correlate with single Bi-content free-exciton recombination, and band-tail filling rather than the donor-acceptor pair process is responsible for the power-induced blueshift. The density of band-tail states gets enhanced with the increase in the Bi incorporation level and affects the determination of Bi-induced bandgap reduction. The results indicate that joint analysis of excitation- and magneto-PL may serve as a good probe for band-tail states in semiconductors.
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| 4. |
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| 5. |
- Chen, X, et al.
(författare)
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Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance
- 2015
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Ingår i: Chinese Physics Letters. - 0256-307X .- 1741-3540. ; 32:6
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Tidskriftsartikel (refereegranskat)abstract
- GaSb(Bi)/Al0.2Ga0.8Sb single quantum wells are characterized by a Fourier transform infrared spectrometerbased photoreflectance method at 77 K. Spatially direct and indirect transitions between the electronic levels at and above the effective band gap are well resolved. The shifts of the electronic levels with Bi incorporation are identified quantitatively. The results show that the upshift of the valence band edge is clarified to be dominant, while the Bi-induced downshift of the conduction band edge does exist and contributes to the band gap reduction in the GaSbBi quantum-well layer by (29±6)%.
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| 6. |
- Chen, X, et al.
(författare)
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Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs / GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity
- 2021
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Ingår i: Physical Review Applied. - 2331-7019. ; 15:4
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Tidskriftsartikel (refereegranskat)abstract
- In-plane uniformity of narrow-gap semiconductor InAs/GaSb type-II superlattice (T2SL) wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength infrared optoelectronic device applications of, e.g., focal-plane-array (FPA) photodetectors. In this work, we report a modulated photoluminescence-mapping (PL-mapping) study of InAs/GaSb T2SL in long-wavelength infrared range with a spatial resolution of a typical FPA-pixel scale. Spatial distributions are analyzed of PL-peak energy, linewidth, and integral intensity, which indicate a high in-plane uniformity of effective band gap but a considerable fluctuation of radiative recombination. The in-plane distributions of effective carrier lifetime and Shockley-Read-Hall defect concentration are evaluated, with the aid of a model that takes into account the pumping power dependence of the PL integral intensity. The results reveal a considerable in-plane nonuniformity of the optoelectronic response that may restrict the performance of the derivative FPA photodetector, and indicate the modulated PL mapping of a good pathway particularly for uniformity analysis of long-wavelength infrared FPA semiconductors.
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| 7. |
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| 8. |
- Dou, Cheng, et al.
(författare)
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Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
- 2022
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 259:4
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Tidskriftsartikel (refereegranskat)abstract
- Herein, low-temperature and temperature-dependent photoluminescence (PL) measurements are carried out on highly tensile-strained Ge nanostructures embedded in GaSb matrix, and the effects of Ge deposition thickness are clarified. The direct-gap transition-related PL feature is successfully identified in the tensile-strained Ge nanostructures. While typical PL thermal quenching is observed for the tensile-strained Ge- and GaSb-related transitions in the samples with a Ge deposition being thinner than the critical thickness, a negative thermal quenching shows up for the GaSb interband transition in the samples with Ge deposition surpassing the critical thickness at which high-density nanoparticles form to relax the strain. A phenomenological thermal-injection model is established of electrons from the tensile-strained Ge layer to the GaSb matrix, the thermal quenching is accounted for, and a ladder-like function of the strain-relaxed Ge is clarified to favor the electron activation. The understanding of the effects of deposition thickness is helpful for the high-performance Ge-based light source for optoelectronic integration.
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| 9. |
- Pan, W. W., et al.
(författare)
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Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
- 2016
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 120:10
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. The type-II transition energy shifts from 1.149 eV to 1.192 eV when increasing the excitation power from 10 mW to 150 mW at 4.5 K, which was ascribed to the band-bending effect. On the other hand, the type-II PL quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. An 8 band k.p model was used to analyze the electronic properties and the band-bending effect in the type-II QW. The calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 meV and 50 meV, respectively, are deduced. Published by AIP Publishing.
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| 10. |
- Shao, J, et al.
(författare)
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Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells
- 2008
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:3, s. Art. Nr. 031904-
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Tidskriftsartikel (refereegranskat)abstract
- We report on experimental evidence for the transition of valence-band alignment from type I to type II in Ga Nx As1-x GaAs single quantum wells by photoreflectance measurements. The substitutional nitrogen content covers a range of 1.4%-5.9%. The turning point of the type I-type II transition occurs at x4.7%. The experimental observations can be well interpreted by a combination of band anticrossing model and model-solid theory when nonlinear behavior of either the shear deformation potential or the average valence-band energy is taken into account. The effect of dilute nitrogen on the valence-band offset of GaNAsGaAs quantum well structure is hence clarified. © 2008 American Institute of Physics.
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