| 1. |
- Bryllert, Tomas, et al.
(författare)
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Vertical high-mobility wrap-gated InAs nanowire transistor
- 2006
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:5, s. 323-325
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
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| 2. |
- Bryllert, Tomas, et al.
(författare)
-
Vertical wrap-gated nanowire transistors
- 2006
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Ingår i: Nanotechnology. - 0957-4484. ; 17:11, s. 227-230
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Tidskriftsartikel (refereegranskat)abstract
- We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.
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| 3. |
- Ohlsson, L., et al.
(författare)
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Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna
- 2014
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Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 24:9, s. 625-627
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Tidskriftsartikel (refereegranskat)abstract
- An integrated millimeter-wave wavelet transmitter has been fabricated and characterized. It consists of a generator core on a co-designed compact monolithically-integrated antenna. The peak output equivalent isotropic radiated power has been measured to 11 dBm, in 80, 160, and 320 ps wavelets centred at 63.5 GHz. This corresponds to a power of 5 dBm radiated from the 6 dBi antenna. At a dc-supply of 1.45 V, the on-state power dissipation was estimated to 37 mW. The radiated wavelet-power over dc-dissipation conversion-efficiency is 9%.
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| 4. |
- Ohlsson, L., et al.
(författare)
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Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration
- 2013
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Ingår i: IEEE Transactions on Antennas and Propagation. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-926X .- 1558-2221. ; 61:4, s. 1599-1607
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Tidskriftsartikel (refereegranskat)abstract
- A readily mass-producible, flip-chip assembled, and slot-coupled III-V compound semiconductor dielectric resonator antenna operating in the millimeter-wave spectrum has been fabricated and characterized. The antenna has a 6.1% relative bandwidth, deduced from its 10 dB return loss over 58.8-62.5 GHz, located around the resonance at 60.5 GHz. Gating in the delay-domain alleviated the analysis of the complex response from the measured structure. The radiation efficiency is better than -0.1 dB in simulations fed from the on-chip coupling-structure, but reduced by 3.7 dB insertion loss through the measurement assembly feed. Antenna gain measurements show distortion in relation to the simulated pattern, which has a maximum gain of 6 dBi, mainly caused by interference from the electrically large connector used in the assembly. Mode degeneration in the utilized quadratic-footprint resonator was not seen to influence the performance of the antenna. The antenna is intended for on-chip integration and the fabrication technology allows scaling of the operation frequency over the complete millimeter-wave spectrum.
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