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- Timm, Rainer, et al.
(författare)
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Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
- 2011
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 88, s. 1091-1094
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Konferensbidrag (refereegranskat)abstract
- We present a synchrotron-based XPS investigation on the interface between InAs and Al2O3 or HfO2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the high-k layer deposition reduces Oxide components. We demonstrate some of the advantages in using synchrotron radiation revealing the variation in Oxide composition as a function of depth into the subsurface region and how we can indentify Oxides even on nanowires covering only a small fraction of the surface.
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| 4. |
- Wu, Jun, et al.
(författare)
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Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:13, s. 3-132905
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Tidskriftsartikel (refereegranskat)abstract
- The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide determines the border trap density, hence the capacitance frequency dispersion. The comparison of different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B substrates followed by an annealing procedure at 400 oC.
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| 5. |
- Timm, Rainer, et al.
(författare)
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Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
- 2011
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:22, s. 1-222907
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Tidskriftsartikel (refereegranskat)abstract
- Abstract in UndeterminedVertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.
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