| 1. |
- Folkersen, Lasse, et al.
(författare)
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Genomic and drug target evaluation of 90 cardiovascular proteins in 30,931 individuals.
- 2020
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Ingår i: Nature metabolism. - : Springer Science and Business Media LLC. - 2522-5812. ; 2:10, s. 1135-1148
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Tidskriftsartikel (refereegranskat)abstract
- Circulating proteins are vital in human health and disease and are frequently used as biomarkers for clinical decision-making or as targets for pharmacological intervention. Here, we map and replicate protein quantitative trait loci (pQTL) for 90 cardiovascular proteins in over 30,000 individuals, resulting in 451 pQTLs for 85 proteins. For each protein, we further perform pathway mapping to obtain trans-pQTL gene and regulatory designations. We substantiate these regulatory findings with orthogonal evidence for trans-pQTLs using mouse knockdown experiments (ABCA1 and TRIB1) and clinical trial results (chemokine receptors CCR2 and CCR5), with consistent regulation. Finally, we evaluate known drug targets, and suggest new target candidates or repositioning opportunities using Mendelian randomization. This identifies 11 proteins with causal evidence of involvement in human disease that have not previously been targeted, including EGF, IL-16, PAPPA, SPON1, F3, ADM, CASP-8, CHI3L1, CXCL16, GDF15 and MMP-12. Taken together, these findings demonstrate the utility of large-scale mapping of the genetics of the proteome and provide a resource for future precision studies of circulating proteins in human health.
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| 2. |
- Dey, Anil, et al.
(författare)
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High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- 2012
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Ingår i: Device research conference. - 1548-3770. ; , s. 205-206
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Konferensbidrag (refereegranskat)abstract
- Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density (Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb nanowire TFETs, which exhibit record-high on-current levels.
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| 3. |
- Dey, Anil, et al.
(författare)
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High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
- 2012
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Konferensbidrag (refereegranskat)abstract
- In this paper we present 15 nm InAs nanowire lateral MOSFETs with an Ω-gate. The nanowires are grown from size-selected Au-aerosols by means of metal-organic vapor phase epixtaxy (MOVPE). In order to reduce the source and drain resistances, n-type dopants were introduced in the bottom and top parts of the nanowire forming a n-i-n structure. We report experimental data for 15 nm InAs nanowire MOSFETs, LG = 150 nm, with a normalized transconducatance gm = 0.7 S/mm (normalized to the circumference) and a current density Je = 24 MA/cm, comparable to modern high electron mobility transistors (HEMTs)
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| 4. |
- Dey, Anil, et al.
(författare)
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High-Performance InAs Nanowire MOSFETs
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:6, s. 791-793
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.
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| 5. |
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| 6. |
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| 7. |
- Nilsson, Peter, et al.
(författare)
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Lessons from Ten Years of the International Master’s Program in System-on-Chip
- 2014
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Konferensbidrag (refereegranskat)abstract
- In July 2000 the five-year Swedish national “Socware Research & Education Program” was started. One of the aims of the program was to develop an innovative unique educational curriculum in System-on-Chip design. The program was targeted at undergraduate and graduate. In total the program received USD $15 million funding. In 2005 the program entered a new phase; more than 500 Master’s students were admitted and 30 PhD students were funded. Cooperation between the System-on-Chip Master’s programs in Lund, Linköping, and Stockholm was already well- established and the program continued in all three locations as an international Master of Science program in System-on-Chip, with local funding from the participating universities. Between 2003 and 2013 there were 3500 applicants to the program in Lund, an average of 350 applicants per year, of these 250 (8%) were accepted. This paper focuses on the international Master of Science Program in System-on-Chip at Lund University, Sweden.
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