| 1. |
- Berg, Martin, et al.
(författare)
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InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:48
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Tidskriftsartikel (refereegranskat)abstract
- Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.
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| 2. |
- Berg, Martin, et al.
(författare)
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Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
- 2014
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Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669.
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Konferensbidrag (refereegranskat)abstract
- We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
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| 3. |
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| 4. |
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| 5. |
- Persson, Karl-Magnus, et al.
(författare)
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InAs nanowire MOSFET differential active mixer on Si-substrate
- 2014
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 50:9, s. 682-682
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Tidskriftsartikel (refereegranskat)abstract
- An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
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| 6. |
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| 7. |
- Persson, Karl-Magnus, et al.
(författare)
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Low-frequency noise in vertical InAs nanowire FETs
- 2010
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 31:5, s. 428-430
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
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| 8. |
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| 9. |
- Nilsson, Peter, et al.
(författare)
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Lessons from Ten Years of the International Master’s Program in System-on-Chip
- 2014
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Konferensbidrag (refereegranskat)abstract
- In July 2000 the five-year Swedish national “Socware Research & Education Program” was started. One of the aims of the program was to develop an innovative unique educational curriculum in System-on-Chip design. The program was targeted at undergraduate and graduate. In total the program received USD $15 million funding. In 2005 the program entered a new phase; more than 500 Master’s students were admitted and 30 PhD students were funded. Cooperation between the System-on-Chip Master’s programs in Lund, Linköping, and Stockholm was already well- established and the program continued in all three locations as an international Master of Science program in System-on-Chip, with local funding from the participating universities. Between 2003 and 2013 there were 3500 applicants to the program in Lund, an average of 350 applicants per year, of these 250 (8%) were accepted. This paper focuses on the international Master of Science Program in System-on-Chip at Lund University, Sweden.
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