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Träfflista för sökning "WFRF:(Ye L.) srt2:(2000-2004);pers:(Nour Omer)"

Sökning: WFRF:(Ye L.) > (2000-2004) > Nour Omer

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1.
  • Jacob, A P, et al. (författare)
  • Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p(+) poly-Si1-xGex and poly-Si gate materials
  • 2002
  • Ingår i: Semiconductor Science and Technology. - : Iop Publishing Ltd. - 0268-1242 .- 1361-6641. ; 17:9, s. 942-946
  • Tidskriftsartikel (refereegranskat)abstract
    • A low-temperature electrical characterization of ultrathin oxide MOS capacitors with p(+) poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFETs. The aim of this study is to compare the low-temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that all the poly-Si and poly-Si1-xGex gated MOS structures exhibit two centres of polarity change (zero-temperature coefficients) in capacitance. The second polarity change leads to an exclusive phenomenon in these structures. The low-temperature capacitance is found to be less than high-temperature capacitance at strong accumulation and this is in contrast to what has been observed so far in metal-gated capacitors. It is also observed that the temperature dependence of the tunnelling current is only on the oxide thickness and not on the gate material used.
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2.
  • Ye, L L, et al. (författare)
  • Structural roughness and interface strain properties in Si/SiO2/poly-Si1-xGex tri-layer system with ultrathin oxide
  • 2003
  • Ingår i: Journal of materials science. Materials in electronics. - : Springer Science Business Media. - 0957-4522 .- 1573-482X. ; 14:4, s. 247-254
  • Tidskriftsartikel (refereegranskat)abstract
    • We have explored the microstructure and local interface strain in the poly-Si1-xGex/SiO2/Si tri-layer system with ultrathin oxides. High-resolution transmission electron microscopy (HRTEM) and high-resolution X-ray diffraction rocking curves (HR-RC) and two-dimensional reciprocal space mapping (2D-RSM) were the main characterization tools. The poly-Si1-xGex/SiO2/Si structures have x=0, 0.2, and 0.35 for ultrathin oxides (2.0-3.0 nm). The result shows that for the adopted growth process, the poly grain size depends very strongly on the Ge concentration, and it increases with increasing Ge mole fraction. In turn, this increase of the grain size in the poly-Si1-xGex/SiO2/Si reduces the strain in the film, which then affects the interface strain at the lower SiO2/Si interface. In addition, the presence of defects at the SiO2/Si interface was found to be greater for samples with no local interface strain.
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Willander, Magnus (2)
Nour, Omer (2)Ta bort avgränsningen
Thölen, A. (2)
Ye, L. L. (2)
Jacob, A P (2)
Myrberg, T (2)
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Lundgren, P (1)
Sveinbjörnsson, E. Ö (1)
Caymax, M (1)
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