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- Karlsson, M., et al.
(författare)
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Wafer-scale epitaxial graphene on SiC for sensing applications
- 2015
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE - The International Society for Optics and Photonics. - 9781628418903
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Konferensbidrag (refereegranskat)abstract
- The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'™'™ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene'™s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer'™s method were also fabricated for comparison.
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| 4. |
- Kristan, M., et al.
(författare)
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The Eighth Visual Object Tracking VOT2020 Challenge Results
- 2020
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Ingår i: Computer Vision. - Cham : Springer International Publishing. - 9783030682378 ; , s. 547-601
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Konferensbidrag (refereegranskat)abstract
- The Visual Object Tracking challenge VOT2020 is the eighth annual tracker benchmarking activity organized by the VOT initiative. Results of 58 trackers are presented; many are state-of-the-art trackers published at major computer vision conferences or in journals in the recent years. The VOT2020 challenge was composed of five sub-challenges focusing on different tracking domains: (i) VOT-ST2020 challenge focused on short-term tracking in RGB, (ii) VOT-RT2020 challenge focused on “real-time” short-term tracking in RGB, (iii) VOT-LT2020 focused on long-term tracking namely coping with target disappearance and reappearance, (iv) VOT-RGBT2020 challenge focused on short-term tracking in RGB and thermal imagery and (v) VOT-RGBD2020 challenge focused on long-term tracking in RGB and depth imagery. Only the VOT-ST2020 datasets were refreshed. A significant novelty is introduction of a new VOT short-term tracking evaluation methodology, and introduction of segmentation ground truth in the VOT-ST2020 challenge – bounding boxes will no longer be used in the VOT-ST challenges. A new VOT Python toolkit that implements all these novelites was introduced. Performance of the tested trackers typically by far exceeds standard baselines. The source code for most of the trackers is publicly available from the VOT page. The dataset, the evaluation kit and the results are publicly available at the challenge website (http://votchallenge.net ).
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- Wang, S M, et al.
(författare)
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Dilute nitrides and 1.3 mu m GaInNAs quantum well lasers on GaAs
- 2009
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Ingår i: MICROELECTRONICS JOURNAL. - : Elsevier BV. - 0026-2692. ; 40:3, s. 386-391
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Tidskriftsartikel (refereegranskat)abstract
- We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 mu m at 300 K. High quality 1.3 mu m GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100 x 1000 mu m(2)) is 300, 300, 400 and 940 A/cm(2) for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 degrees C under a constant voltage has been demonstrated.
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| 6. |
- Wang, S M, et al.
(författare)
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Growth of GaInNAs and 1.3 mu m edge emitting lasers by molecular beam epitaxy
- 2009
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Ingår i: JOURNAL OF CRYSTAL GROWTH. - : Elsevier BV. - 0022-0248. ; 311:7, s. 1863-1867
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Tidskriftsartikel (refereegranskat)abstract
- We show that the use of a low growth rate combined with low N flux and RF power during molecular beam epitaxy (MBE) growth of dilute nitrides can efficiently enhance N incorporation while retaining good optical quality. A maximum light emission wavelength of 1.44 and 1.71 mu m has been obtained at 300 K from GaNAs and GaInNAs quantum wells, respectively. We demonstrate high-performance 1.3 pm GaInNAs multiple quantum well edge emitting lasers with record low threshold current densities, a 3 dB modulation bandwidth of 17 GHz at 300 K and capability of being modulated at 10 Gbit/s up to 110 degrees C without extra coolers. Our results show that MBE is an epitaxial technology suitable for the growth of dilute nitride materials and devices.
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- Willander, Magnus, et al.
(författare)
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Optical properties of InAs quantum dots
- 2002
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Ingår i: Acta Physica Polonica. A. - : Polish Academy of Sciences Warsaw. - 0587-4246 .- 1898-794X. ; 102:4-5, s. 567-576
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Tidskriftsartikel (refereegranskat)abstract
- InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.
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| 9. |
- Zhao, Qingxiang, 1962-, et al.
(författare)
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Optical properties of GaInNAs/GaAs quantum well structures
- 2007
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:10, s. 4423-4426
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Tidskriftsartikel (refereegranskat)abstract
- The radiative recombination in GaInNAs/GaAs quantum well structures was investigated by low temperature optical spectroscopy. In the temperature region, below 100 K, we found that the observed transition energies strongly depend on the excitation intensity and the temperature, which is indicative of carrier localization. The degree of carrier localization depends on the In-concentration but is not significantly influenced by the N-concentration when the N-concentration exceeds 1.6%. Photoluminescence studies indicate that the degree of the carrier localization decreases with increasing In-concentration at a constant N-concentration. In addition, the experimental results show that carrier localization is strongly correlated to deep level emission. Through post-growth thermal treatment at 650 °C both carrier localization and deep level emission can be eliminated.
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