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Träfflista för sökning "WFRF:(Song Yuxin 1981) srt2:(2015)"

Sökning: WFRF:(Song Yuxin 1981) > (2015)

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1.
  • Pan, W. W., et al. (författare)
  • Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 1361-6641 .- 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
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2.
  • Shao, Jun, et al. (författare)
  • Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
  • 2015
  • Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 118:16, s. 165305-
  • Tidskriftsartikel (refereegranskat)abstract
    • The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells(SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence(PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PLpeak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i)the low-energy component (LE) keeps energetically unchanged, while the high-energy component(HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs butcrosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAsSQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE andHE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAsshows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolutionof PL energy with temperature is detectable, and similar blueshift and narrowing are identifiedfor the same annealing. The phenomena are mainly from the interfacial processes. Annealingimproves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacialfluctuation. The interfacial interdiffusion does not change obviously by the small N contentand hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominallyidentical annealing. Comparison with previous studies is made and the PL measurementsunder different conditions are shown to be effective for probing the interfacial evolution in QWs.
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3.
  • Song, Yuxin, 1981, et al. (författare)
  • Natural patterning of templates on GaAs by formation of cracks
  • 2015
  • Ingår i: AIP Advances. - 2158-3226. ; 5:6, s. Art Nr 067146-
  • Tidskriftsartikel (refereegranskat)abstract
    • Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.
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4.
  • Wu, X. Y., et al. (författare)
  • Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 1361-6641 .- 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.
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5.
  • Xu, H., et al. (författare)
  • Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
  • 2015
  • Ingår i: AIP Advances. - 2158-3226. ; 5:8
  • Tidskriftsartikel (refereegranskat)abstract
    • Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.
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