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Sökning: WFRF:(Townsend Paul A) > (2006-2009) > (2006)

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1.
  • Lynch, S.A., et al. (författare)
  • Toward silicon-based lasers for terahertz sources
  • 2006
  • Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X .- 1558-4542. ; 12:6, s. 1570-1577
  • Tidskriftsartikel (refereegranskat)abstract
    • Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
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2.
  • Zhao, Ming, et al. (författare)
  • Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates
  • 2006
  • Ingår i: Thin Solid Films. - 0040-6090. ; 508:1-2, s. 24-28
  • Tidskriftsartikel (refereegranskat)abstract
    • Si/SiGe quantum cascade structures containing superlattice up to 100 periods have been grown on SiGe virtual substrates by using solid-source molecular beam epitaxy at low temperature. The surface morphology and structural properties of the grown samples were characterized using various experimental techniques. It has been concluded that the structures were completely symmetrically strained with high crystalline quality, precise layer parameters, and excellent reproducibility. Electroluminescence was observed with peaked intensity at 3 THz at both 4 and 40 K, which agrees very well with expected interwell intersubband transition according to the design.
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