| 1. |
- de Oliveira, A. C., et al.
(författare)
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Spectroscopy studies of 4H-SiC
- 2002
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Ingår i: Materials Research. ; 6, s. 43-
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Tidskriftsartikel (refereegranskat)
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| 2. |
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| 3. |
- Ahuja, Rajeev, et al.
(författare)
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Electronic and optical properties of gamma-Al2O3 from ab initio theory
- 2004
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 16:16, s. 2891-2900
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Tidskriftsartikel (refereegranskat)abstract
- We report on a density functional theory calculation of the electronic structure and optical properties of gamma-Al2O3. We have made a comparison between the optical and electronic properties of the alpha and gamma phases of alumina. The calculated bulk modulus of the gamma phase is slightly lower than that of the a phase. The calculated static dielectric function and the optical constant of the gamma phase are very close to those of the alpha phase.
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| 4. |
- Ahuja, Rajeev, et al.
(författare)
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Electronic and optical properties of lead iodide
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:12, s. 7219-7224
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Tidskriftsartikel (refereegranskat)abstract
- The electronic properties and the optical absorption of lead iodide (PbI2) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
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| 5. |
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| 6. |
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| 7. |
- da Silva, A. F., et al.
(författare)
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Optical properties of oxide compounds PbO, SnO2 and TiO2
- 2004
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T109, s. 180-183
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties of the oxide compounds PbO and SnO2 have been investigated experimentally by transmission spectroscopy measurements and theoretically by a full-potential linearized augmented plane wave (FPLAPW) method. The dielectric functions of the rutile TiO2 has also been calculated. The calculated band-gap energies as well as the optical absorption were found to be in a very good qualitatively agreement with the experimental results.
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| 8. |
- Moyses, Araujo C., et al.
(författare)
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Band-gap shift of the heavily doped single- and double-donor systems Si : Bi and Si
- 2000
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:19, s. 12882-12887
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Tidskriftsartikel (refereegranskat)abstract
- The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different many-body effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.
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| 9. |
- Souza De Almeida, J., et al.
(författare)
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Optical properties of donor-triad cluster in GaAs and GaN
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:17, s. 3158-3160
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Tidskriftsartikel (refereegranskat)abstract
- The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.
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| 10. |
- Ahuja, Rajeev, et al.
(författare)
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Optical properties of SiGe alloys
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:7, s. 3832-3836
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Tidskriftsartikel (refereegranskat)abstract
- The optical properties of Si1-xGex have been investigated theoretically using a full-potential linear muffin-tin-orbital method. We present the density-of-states as well as the real and imaginary parts of the dielectric function. The calculated dielectric function was found to be in good agreement with the spectroscopic ellipsometry measurements by J. Bahng , J. Phys.: Condens. Matter 13, 777 (2001), and we obtained a static dielectric constant of epsilon(0)=12.19+2.45x in the Si rich regime (xless than or equal to0.5).
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