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Numrering	Referens	Omslagsbild	Hitta
1.	de Oliveira, A. C., et al. (författare) Spectroscopy studies of 4H-SiC 2002 Ingår i: Materials Research. ; 6, s. 43- Tidskriftsartikel (refereegranskat)
2.	Ahuja, R., et al. (författare) Optical Properties of SiGe Alloys 2003 Ingår i: J. Appl. Phys.. ; 93:3832 Tidskriftsartikel (refereegranskat)
3.	Ferreira da Silva, A., et al. (författare) Optical Properties of Oxide Compounds PbO, SnO2 and TiO2 2004 Ingår i: Physica Scripta T. ; 109:180 Tidskriftsartikel (refereegranskat)
4.	Souza De Almeida, J., et al. (författare) Optical properties of donor-triad cluster in GaAs and GaN 2002 Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:17, s. 3158-3160 Tidskriftsartikel (refereegranskat)abstract The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.

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