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- de Oliveira, A. C., et al.
(författare)
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Spectroscopy studies of 4H-SiC
- 2002
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Ingår i: Materials Research. ; 6, s. 43-
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Tidskriftsartikel (refereegranskat)
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4. |
- Souza De Almeida, J., et al.
(författare)
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Optical properties of donor-triad cluster in GaAs and GaN
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:17, s. 3158-3160
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Tidskriftsartikel (refereegranskat)abstract
- The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.
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