| 1. |
- Hedegaard, Jakob, et al.
(författare)
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Comprehensive Transcriptional Analysis of Early-Stage Urothelial Carcinoma
- 2016
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Ingår i: Cancer Cell. - : Elsevier BV. - 1535-6108 .- 1878-3686. ; 30:1, s. 27-42
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Tidskriftsartikel (refereegranskat)abstract
- Non-muscle-invasive bladder cancer (NMIBC) is a heterogeneous disease with widely different outcomes. We performed a comprehensive transcriptional analysis of 460 early-stage urothelial carcinomas and showed that NMIBC can be subgrouped into three major classes with basal-and luminal-like characteristics and different clinical outcomes. Large differences in biological processes such as the cell cycle, epithelial-mesenchymal transition, and differentiation were observed. Analysis of transcript variants revealed frequent mutations in genes encoding proteins involved in chromatin organization and cytoskeletal functions. Furthermore, mutations in well-known cancer driver genes (e.g., TP53 and ERBB2) were primarily found in high-risk tumors, together with APOBEC-related mutational signatures. The identification of subclasses in NMIBC may offer better prognostication and treatment selection based on subclass assignment.
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| 2. |
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| 3. |
- Berdnikov, Yury, et al.
(författare)
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Broadening of length distributions of Au-catalyzed InAs nanowires
- 2016
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Ingår i: State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2016: Proceedings of the 5th International Conference "State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects". - : Author(s). - 9780735414051 ; 1748
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Konferensbidrag (refereegranskat)abstract
- We investigate kinetic broadening effects on the length distributions of gold-catalyzed InAs nanowires having different diameters. It is shown that the length distributions acquire bimodal shape when the longest nanowires exceed the diffusion length of indium adatoms on the nanowire sidewalls. Later on, the length distributions recover unimodal shapes. We develop a theoretical model that is capable of describing the observed behaviors by accounting for the diffusion-induced character of the vapor-liquid-solid growth.
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| 4. |
- Borg, Mattias, et al.
(författare)
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Autonomy in PhD-education – Supervising for Independence
- 2016
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Ingår i: LTHs 9:e Pedagogiska Inspirationskonferens. ; , s. 9-13
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Konferensbidrag (refereegranskat)abstract
- According to the Swedish higher ordinance of education the development of autonomy of PhD students is of high importance. Graduates should be able to formulate new ideas and to independently assess and evaluate scientific results. Therefore it is interesting to investigate how the relationship between student and supervisor impacts the development of autonomy. In this work, we have evaluated the impact of the supervision relationship by a supervisor/studentalignment test (N=25) where both students and their supervisors perform a self-evaluation of the student’s level of autonomy and the supervisor’s supervision style. The test results show that the autonomy is greater for students with longer experience and also more aligned with the level of autonomy as perceived by their supervisors. The misalignment between the assessment done by students and supervisors decreases with age and time spent as a PhD student. However, we find that the misalignment increases when supervisors have many concurrent PhD students. We observe no statistical differences with respect to gender or nationality.
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| 5. |
- Borg, Mattias, et al.
(författare)
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Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- 2019
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:8
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Tidskriftsartikel (refereegranskat)abstract
- InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.
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| 6. |
- Dubrovskii, Vladimir G., et al.
(författare)
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Length Distributions of Nanowires Growing by Surface Diffusion
- 2016
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Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 16:4, s. 2167-2172
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Tidskriftsartikel (refereegranskat)abstract
- We present experimental data on the time and radius-dependent length distributions of Au-catalyzed InAs nanowires grown by metal organic vapor phase epitaxy. We show that these distributions are not as sharp as commonly believed. Rather, they appear to be much broader than Poissonian from the very beginning and spread quickly as the nanowires grow. We develop a model that attributes the observed broadening to the diffusion-induced character of growth. In the initial growth stage, the nanowires are fed from their entire length, leading to a Polya-like length distribution whose standard deviation is proportional to the mean length. After the nanowire length exceeds the adatom diffusion length, the growth acquires a Poissonian character in which the standard deviation scales as a square root of the mean length. We explain why wider nanowires have smaller length dispersion and speculate on the length distributions in Au-catalyzed versus self-catalyzed growth methods.
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| 7. |
- Gooth, Johannes, et al.
(författare)
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Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
- 2016
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Ingår i: ACS Nano. - Washington : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 10:7, s. 7180-7188
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Tidskriftsartikel (refereegranskat)abstract
- Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.
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| 8. |
- Gooth, Johannes, et al.
(författare)
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Transition to the quantum hall regime in InAs nanowire cross-junctions
- 2019
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 34
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Tidskriftsartikel (refereegranskat)abstract
- We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2/h)−1. e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase.
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| 9. |
- Jones, Robert P., et al.
(författare)
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Patterns of Recurrence After Resection of Pancreatic Ductal Adenocarcinoma : A Secondary Analysis of the ESPAC-4 Randomized Adjuvant Chemotherapy Trial
- 2019
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Ingår i: JAMA Surgery. - : AMER MEDICAL ASSOC. - 2168-6254 .- 2168-6262. ; 154:11, s. 1038-1048
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Tidskriftsartikel (refereegranskat)abstract
- Importance: The patterns of disease recurrence after resection of pancreatic ductal adenocarcinoma with adjuvant chemotherapy remain unclear.Objective: To define patterns of recurrence after adjuvant chemotherapy and the association with survival.Design, Setting, and Participants: Prospectively collected data from the phase 3 European Study Group for Pancreatic Cancer 4 adjuvant clinical trial, an international multicenter study. The study included 730 patients who had resection and adjuvant chemotherapy for pancreatic cancer. Data were analyzed between July 2017 and May 2019.Interventions: Randomization to adjuvant gemcitabine or gemcitabine plus capecitabine.Main Outcomes and Measures: Overall survival, recurrence, and sites of recurrence.Results: Of the 730 patients, median age was 65 years (range 37-81 years), 414 were men (57%), and 316 were women (43%). The median follow-up time from randomization was 43.2 months (95% CI, 39.7-45.5 months), with overall survival from time of surgery of 27.9 months (95% CI, 24.8-29.9 months) with gemcitabine and 30.2 months (95% CI, 25.8-33.5 months) with the combination (HR, 0.81; 95% CI, 0.68-0.98; P=.03). The 5-year survival estimates were 17.1% (95% CI, 11.6%-23.5%) and 28.0% (22.0%-34.3%), respectively. Recurrence occurred in 479 patients (65.6%); another 78 patients (10.7%) died without recurrence. Local recurrence occurred at a median of 11.63 months (95% CI, 10.05-12.19 months), significantly different from those with distant recurrence with a median of 9.49 months (95% CI, 8.44-10.71 months) (HR, 1.21; 95% CI, 1.01-1.45; P=.04). Following recurrence, the median survival was 9.36 months (95% CI, 8.08-10.48 months) for local recurrence and 8.94 months (95% CI, 7.82-11.17 months) with distant recurrence (HR, 0.89; 95% CI, 0.73-1.09; P=.27). The median overall survival of patients with distant-only recurrence (23.03 months; 95% CI, 19.55-25.85 months) or local with distant recurrence (23.82 months; 95% CI, 17.48-28.32 months) was not significantly different from those with only local recurrence (24.83 months; 95% CI, 22.96-27.63 months) (P=.85 and P=.35, respectively). Gemcitabine plus capecitabine had a 21% reduction of death following recurrence compared with monotherapy (HR, 0.79; 95% CI, 0.64-0.98; P=.03).Conclusions and Relevance: There were no significant differences between the time to recurrence and subsequent and overall survival between local and distant recurrence. Pancreatic cancer behaves as a systemic disease requiring effective systemic therapy after resection.Trial Registration: ClinicalTrials.gov identifier: NCT00058201, EudraCT 2007-004299-38, and ISRCTN 96397434. This secondary analysis of a randomized clinical trial investigates patterns of recurrence after adjuvant chemotherapy in pancreatic cancer and the association with survival.
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| 10. |
- Knoedler, Moritz, et al.
(författare)
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Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
- 2017
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Ingår i: Crystal Growth and Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 17:12, s. 6297-6302
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Tidskriftsartikel (refereegranskat)abstract
- We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.
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