| 1. |
- Beck, Marc, et al.
(författare)
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Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography
- 2004
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 73-74, s. 837-842
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Tidskriftsartikel (refereegranskat)abstract
- Nanometer-structured transducers for commercial use in pharmaceutical, medical or (bio-) chemical analysis have so far been hardly accessible since they could not be produced by parallel lithography techniques at reasonable costs. We introduce here a method on. how to fabricate nanometer-structured interdigitated array electrodes including interconnections and bond pads in the micrometer range in a single imprint step on 2-in. wafer scale. The method enables the mass production of those devices at lowest cost opening a new field for the commercial use of nanometer-structured sensor systems.
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| 2. |
- Carlberg, Patrick, et al.
(författare)
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Lift-off process for nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568 .- 0167-9317. ; 67-8, s. 203-207
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Konferensbidrag (refereegranskat)abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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| 3. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint - a tool for realizing nano-bio research
- 2004
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Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
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Konferensbidrag (refereegranskat)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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| 4. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint in mr-L 6000.1 XP/PMMA resist system
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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| 5. |
- Carlberg, Patrick
(författare)
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Nanoimprint lithography
- 2004
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Ingår i: NSF/SSF Workshop on Nanoscience and Nanotechnology, Lund, Sweden (2004).
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Konferensbidrag (refereegranskat)
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| 6. |
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| 7. |
- Forsen, E, et al.
(författare)
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Fabrication of cantilever based mass sensors integrated with CMOS using direct write laser lithography on resist
- 2004
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 15:10, s. 628-633
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Tidskriftsartikel (refereegranskat)abstract
- A CMOS compatible direct write laser lithography technique has been developed for cantilever fabrication on pre-fabricated standard CMOS. We have developed cantilever based sensors for mass measurements in vacuum and air. The cantilever is actuated into lateral vibration by electrostatic excitation and the resonant frequency is detected by capacitive readout. The device is integrated on standard CMOS circuitry. In the work a new direct write laser lithography (DWL) technique is introduced. This laser lithography technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on lift-off resist (LOR). Laser writing evaporates the PMMA, exposing the LOR. A resist solvent is used to transfer the pattern down to the substrate. Metal lift-off followed by reactive ion etching is used for patterning the structural poly-Si layer in the CMOS. The developed laser lithography technique is compatible with resist exposure techniques such as electron beam lithography. We demonstrate the fabrication of sub-micrometre wide suspended cantilevers as well as metal lift-off with feature line widths down to approximately 500 nm.
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| 8. |
- Forsen, E, et al.
(författare)
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Laser lithography on resist bi-layer for nanoelectromechanical systems prototyping
- 2004
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 73-74, s. 491-495
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Tidskriftsartikel (refereegranskat)abstract
- We present a laser lithography technique based on lift-off, for fast and flexible prototyping of micro and nanoelectromechanical systems (MEMS/NEMS). The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of polymethyl methacrylate (PMMA) on lift-off resist (LOR). Laser writing melts and evaporates the PMMA exposing the LOR. Oxygen ashing removes PMMA residues within the lithography pattern. A resist solvent is used to transfer the pattern down to the substrate. The LOR is dissolved isotropically while the PMMA is unaffected by the solvent, hence creating an undercut profile. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface. First, warm acetone dissolves the PMMA and lifts off the metal layer, then warm Remover PG removes the LOR and any remaining metal. Metal structures with line widths down to 600 nm and dots with 600 mn diameters are presented. (C) 2004 Elsevier B.V. All rights reserved.
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| 9. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- 2002
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
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| 10. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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