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Träfflista för sökning "WFRF:(Fu Yifeng 1984) srt2:(2010-2014);srt2:(2013)"

Sökning: WFRF:(Fu Yifeng 1984) > (2010-2014) > (2013)

  • Resultat 1-8 av 8
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1.
  • Gao, Zhaoli, 1986, et al. (författare)
  • Graphene Heat Spreader for Thermal Management of Hot Spots
  • 2013
  • Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781479902330 ; , s. 2075-2078
  • Konferensbidrag (refereegranskat)abstract
    • Monolayer graphene was fabricated using thermal chemical vapor deposition (TCVD) as heat spreaders in electronic packaging. Platinum (Pt) thermal evaluation chips were utilized to evaluate the thermal performance of the graphene heat spreaders. Temperature of hot spot driven at a heat flux of up to 430W·cm -2 was decreased by about 13 °C with the attaching of the graphene heat spreader. We demonstrate the potentials of using CMOS compatible TCVD process to make graphene as heat spreader for power dissipation needs. © 2013 IEEE.
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  • Huang, Shirong, et al. (författare)
  • Graphene Based Heat Spreader for High Power Chip Cooling Using Flip-chip Technology
  • 2013
  • Ingår i: 2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013). - 9781479928330 ; , s. 347-352
  • Konferensbidrag (refereegranskat)abstract
    • Monolayer graphene was synthesized through thermal chemical vapor deposition (TCVD) as heat spreader for chip cooling. Platinum (Pt) serpentine functioned as hot spot on the thermal testing chip. The thermal testing chip with monolayer graphene film attached was bonded using flip-chip technology. The temperature at the hot spot with a monolayer graphene film as heat spreader was decreased by about 12°C and had a more uniform temperature compared to those without graphene heat spreader when driven by a heat flux of about 640W/cm 2 . Further improvements to the cooling performance of graphene heat spreader could be made by optimizing the synthesis parameters and transfer process of graphene films. © 2013 IEEE.
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  • Li, X., et al. (författare)
  • Reliability of Carbon Nanotube Bumps for Chip on Film Application
  • 2013
  • Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - 1944-9399 .- 1944-9380. - 9781479906758 ; , s. 845-848
  • Konferensbidrag (refereegranskat)abstract
    • Carbon nanotubes (CNTs) are an ideal candidate for electrical interconnects due to their extraordinary thermal, electrical and mechanical properties. In this work, as-densified CNT bumps were applied as chip on film (COF) interconnection material. A silicon chip with patterned CNT bumps was bonded onto a flexible substrate using anisotropic conductive adhesive (ACA) with bonding pressure, at 127.4 MPa, 170 °C and for 8 seconds. The electrical properties of this structure were evaluated by measuring the contact resistance of each bump using the four-point probe method. Thermal cycling (-40∼85°C, 1000 cycles) and damp heat tests (85°C/85% RH, 1000 hours) were conducted to evaluate the reliabilities of the CNT-COF structure bonded with ACA. The average contact resistances of two samples used for the reliability tests were 226 mΩ and 260mΩ. No electrical failure was observed after the damp heat test and only two were observed after the thermal cycling test. The average contact resistance was increased only 15.7% and 13.8%, respectively, after the thermal cycling and the damp heat tests. © 2013 IEEE.
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5.
  • Liu, Johan, 1960, et al. (författare)
  • Carbon Nanotubes for Electronics Manufacturing and Packaging: From Growth to Integration
  • 2013
  • Ingår i: Advances in Manufacturing. - : Springer Science and Business Media LLC. - 2095-3127 .- 2195-3597. ; 1:1, s. 13-27
  • Forskningsöversikt (refereegranskat)abstract
    • Carbon nanotubes (CNTs) possess excellent electrical, thermal and mechanical properties. They are light in weight yet stronger than most of the other materials. They can be made both highly conductive and semi-conductive. They can be made from nano-sized small catalyst particles and extend to tens of millimeters long. Since CNTs emerged as a hot topic in the early 1990s, numerous research efforts have been spent on the study of the various properties of this new material. CNTs have been proposed as alternative materials of potential excellence in a lot of applications such as electronics, chemical sensors, mechanical sensors/actuators and composite materials, etc. This paper reviews the use of CNTs particularly in electronics manufacturing and packaging field. The progresses of three most important applications, including CNT-based thermal interface materials, CNT-based interconnections and CNT-based cooling devices are reviewed. The growth and post-growth processing of CNTs for specific applications are introduced and the tailoring of CNTs properties, i.e., electrical resistivity, thermal conductivity and strength, etc., is discussed with regard to specific application requirement. As the semiconductor industry is still driven by the need of getting smaller and faster, CNTs and the related composite systems as emerging new materials are likely to provide the solution to the future challenges as we make more and more complex electronics devices and systems.
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  • Xu, Liang, et al. (författare)
  • Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD
  • 2013
  • Ingår i: Advances in Manufacturing. - : Springer Science and Business Media LLC. - 2095-3127 .- 2195-3597. ; 1:3, s. 236-240
  • Tidskriftsartikel (refereegranskat)abstract
    • Due to their unique thermal, electronic and mechanical properties, carbon nanotubes (CNTs) have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition (PECVD) has been extensively developed as one growth technique to produce vertically-aligned carbon nanotubes (VACNTs). Though CNTs show a trend to be integrated into nanoelectromechanical system (NEMS), CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and underlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and by increasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT density by changing the thickness of Cu underlayer. © 2013 Shanghai University and Springer-Verlag Berlin Heidelberg.
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8.
  • Zhang, Yan, 1976, et al. (författare)
  • Experimental study of Electrical properties and stability of CNT bumps in high density interconnects
  • 2013
  • Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - 1944-9399 .- 1944-9380. - 9781479906758 ; , s. 1085-1088
  • Konferensbidrag (refereegranskat)abstract
    • With the minimization development of electronic devices and products, nanotechnology and nanomaterials are widely applied in different fields of electronic packaging. Carbon nanotube (CNT) is an ideal material due to its excellent electrical and thermal conductivities. In the present paper, the application of CNT bundles as chip bumps was experimentally investigated. The electrical resistances of the CNT interconnects were measured, and the thermal and humidity test were conducted. In addition, the CNT forests on fine pitch copper lines under various environmental test conditions were observed to evaluate the stability. © 2013 IEEE.
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  • Resultat 1-8 av 8

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