SwePub
Tyck till om SwePub Sök här!
Sök i SwePub databas

  Extended search

Träfflista för sökning "WFRF:(Heinrich J.) ;hsvcat:2;srt2:(2007-2009)"

Search: WFRF:(Heinrich J.) > Engineering and Technology > (2007-2009)

  • Result 1-2 of 2
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Echtermeyer, Tim J., et al. (author)
  • Nonvolatile switching in graphene field-effect devices
  • 2008
  • In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:8, s. 952-954
  • Journal article (peer-reviewed)abstract
    • The absence of a band gap in graphene restricts its straightforward application as a channel material in field-effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "ON-state" and an insulating "OFF-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts.
  •  
2.
  • Lemme, Max C., 1970-, et al. (author)
  • A graphene field-effect device
  • 2007
  • In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 28:4, s. 282-284
  • Journal article (peer-reviewed)abstract
    • In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Lemme, Max C., 1970- (2)
Kurz, Heinrich (2)
Echtermeyer, Tim J. (2)
Baus, Matthias (2)
Szafranek, Bartholom ... (1)
Geim, Andre K. (1)
University
Royal Institute of Technology (2)
Language
English (2)
Research subject (UKÄ/SCB)

Year

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view