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Träfflista för sökning "WFRF:(Lai Zonghe 1948) srt2:(2010-2014);srt2:(2011)"

Sökning: WFRF:(Lai Zonghe 1948) > (2010-2014) > (2011)

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1.
  • Dochev, Dimitar Milkov, 1981, et al. (författare)
  • Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
  • 2011
  • Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 24:3, s. 035016 (6pp)-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivitymeasurements of the films have shown that the superconducting transition onset temperature (TC) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature TC = 11.3 K and critical current density of about 2.5 MA cm−2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
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2.
  • Song, Yuxin, 1981, et al. (författare)
  • Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
  • 2011
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 323:1, s. 21-25
  • Tidskriftsartikel (refereegranskat)abstract
    • Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.
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