Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

• The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga 1-xMn xAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Beryllium

Carrier concentration

Magnetic field effects

Molecular beam epitaxy

Semiconducting gallium compounds

Semiconductor doping

SQUIDs

Thermodynamics

Curie temperature

Ferromagnetic materials

Publication and Content Type

ref (subject category)

art (subject category)