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Träfflista för sökning "WFRF:(Lombardi Floriana 1967) srt2:(2020-2021)"

Sökning: WFRF:(Lombardi Floriana 1967) > (2020-2021)

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1.
  • Andersson, Eric, 1992, et al. (författare)
  • Fabrication and electrical transport characterization of high quality underdoped YBa2Cu3O7-δ nanowires
  • 2020
  • Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 33:6
  • Tidskriftsartikel (refereegranskat)abstract
    • We present the fabrication and electrical transport characterization of underdoped YBa2Cu3O7-δnanowires. The nanowires have been realized without any protective capping layer and theyshow transport properties similar to those of the parent thin film, demonstrating that they havenot been damaged by the nanopatterning. The current-voltage characteristics of the underdopednanowires show large hysteretic voltage switching at the critical current, in contrast to theflux-flow like characteristics of optimally doped nanostructures, indicating the formation of aself-stabilizing hot spot. These results open up new possibilities for using the underdopednanowires as single photon detectors and for exploring the underdoped side of the YBa2Cu3O7-δphase diagram at the nanoscale.
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2.
  • Calavalle, Francesco, et al. (författare)
  • Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers
  • 2021
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 21:1, s. 136-143
  • Tidskriftsartikel (refereegranskat)abstract
    • Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical temperature (TC) of large-area NbSe2 monolayers is manipulated, employing ultrathin molecular adlayers. Spectroscopic evidence indicates that aligned molecular dipoles within the self-assembled layers act as a fixed gate terminal, collectively generating a macroscopic electrostatic field on NbSe2. This results in an ∼55% increase and a 70% decrease in TC depending on the electric field polarity, which is controlled via molecular selection. The reported functionalization, which improves the air stability of NbSe2, is efficient, practical, up-scalable, and suited to functionalize large-area TMDs. Our results indicate the potential of hybrid 2D materials as a novel platform for tunable superconductivity.
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3.
  • Kunakova, Gunta, 1987, et al. (författare)
  • High-Mobility Ambipolar Magnetotransport in Topological Insulator Bi2Se3 Nanoribbons
  • 2021
  • Ingår i: Physical Review Applied. - 2331-7019. ; 16:2
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanoribbons of topological insulators (TIs) have been suggested for a variety of applications exploiting the properties of the topologically protected surface Dirac states. In these proposals it is crucial to achieve a high tunability of the Fermi energy, through the Dirac point while preserving a high mobility of the involved carriers. Tunable transport in TI nanoribbons has been achieved by chemical doping of the materials so to reduce the bulk carriers' concentration, however at the expense of the mobility of the surface Dirac electrons, which is substantially reduced. Here we study bare Bi2Se3 nanoribbons transferred on a variety of oxide substrates and demonstrate that the use of a large relative permittivity SrTiO3 substrate enables the Fermi energy to be tuned through the Dirac point and an ambipolar field effect to be obtained. Through magnetotransport and Hall conductance measurements, performed on single Bi2Se3 nanoribbons, we demonstrate that electron and hole carriers are exclusively high-mobility Dirac electrons, without any bulk contribution. The use of SrTiO3 allows therefore an easy field effect gating in TI nanostructures providing an ideal platform to take advantage of the properties of topological surface states.
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4.
  • Kunakova, Gunta, 1987, et al. (författare)
  • Topological insulator nanoribbon Josephson junctions: Evidence for size effects in transport properties
  • 2020
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 128:19
  • Tidskriftsartikel (refereegranskat)abstract
    • We have used Bi 2 Se 3 nanoribbons, grown by catalyst-free physical vapor deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices, we observe a pronounced reduction of the Josephson critical current density J c by reducing the width of the junction, which in our case corresponds to the width of the nanoribbon. Because the topological surface states extend over the entire circumference of the nanoribbon, the superconducting transport associated with them is carried by modes on both the top and bottom surfaces of the nanoribbon. We show that the J c reduction as a function of the nanoribbon width can be accounted for by assuming that only the modes traveling on the top surface contribute to the Josephson transport as we derive by geometrical consideration. This finding is of great relevance for topological quantum circuitry schemes since it indicates that the Josephson current is mainly carried by the topological surface states.
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5.
  • Niherysh, K. A., et al. (författare)
  • Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique
  • 2021
  • Ingår i: Nanoscale Advances. - : Royal Society of Chemistry (RSC). - 2516-0230. ; 3:22, s. 6395-6402
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3 thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2g) and out-of-plane (A21g) Raman mode positions. For Bi2Se3 films deposited on quartz, experimental datapoints are scattered along the line with a slope of similar to 0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi2Se3 samples, for graphene/Bi2Se3 heterostructures with the same thicknesses, an additional negative slope of similar to-0.85, which can be associated with the distribution of the in-plane (a-b) biaxial tensile strain due to the film-substrate lattice mismatch, is observed. The algorithm of phonon deformation potential (PDP) calculation based on the proposed strain analysis for the 3 nm thick Bi2Se3 film deposited on the graphene substrate, where the strain is considered to be coherent across the thickness, is demonstrated. The PDPs for biaxial in-plane strain of the Bi2Se3 3 nm film in in-plane and out-of-plane modes are equal to -7.64 cm(-1)/% and -6.97 cm(-1)/%, respectively.
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6.
  • Salvato, Matteo, et al. (författare)
  • Stoichiometric Bi(2)Se(3)topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications
  • 2020
  • Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 12:23, s. 12405-12415
  • Tidskriftsartikel (refereegranskat)abstract
    • A new fabrication process is developed for growing Bi(2)Se(3)topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi(2)Se(3)nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at a temperature below 100 degrees C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films are analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectifying properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range.
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7.
  • Singh, Gyanendra, 1983, et al. (författare)
  • Nanopatterning of weak links in superconducting oxide interfaces
  • 2021
  • Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 11:2, s. 1-11
  • Tidskriftsartikel (refereegranskat)abstract
    • The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30–100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.
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8.
  • Trabaldo, Edoardo, 1990, et al. (författare)
  • Electromigration tuning of the voltage modulation depth in YBa2Cu3O7-delta nanowire-based SQUIDs
  • 2021
  • Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 34:10
  • Tidskriftsartikel (refereegranskat)abstract
    • Oxygen electromigration applied to a YBa2Cu3O7-delta nanowire can be used to tune its electrical properties. Here, we apply electromigration to YBCO nanowire-based superconducting quantum interference devices (SQUIDs) and study its effect on the voltage modulation depth of the devices. Using a dc electromigration current we replenish the oxygen of the weak links, improving the critical current symmetry of the SQUIDs. AC current electromigration is used to reduce the doping level of the weak links, thus reducing their critical current and increasing differential resistance. Both type of electromigration processes are found to improve the SQUIDs performance, although the best results are obtained with ac biased electromigration, which improved the voltage modulations of the SQUIDs by a factor as high as 8. This procedure can be instrumental to fine tune ex-situ the properties of superconducting electronics where a large number of weak links are required.
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9.
  • Trabaldo, Edoardo, 1990, et al. (författare)
  • Properties of grooved Dayem bridge based YBa2Cu3 O 7 - δ superconducting quantum interference devices and magnetometers
  • 2020
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:13
  • Tidskriftsartikel (refereegranskat)abstract
    • The transport properties of a YBa2Cu3 O 7 - δ superconducting quantum interference device (SQUID) based on grooved Dayem bridge weak links are studied as a function of temperature: at high temperatures (60 K < T < T c = 89 K), the weak links show properties similar to superconductor-normal conductor-superconductor junctions, while at temperatures below 60 K, the weak links behave like short Dayem bridges. Using these devices, we have fabricated SQUID magnetometers with galvanically coupled in-plane pickup loops: at T = 77 K, magnetic field white noise levels as low as 63 fT/ Hz have been achieved. © 2020 Author(s).
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10.
  • Trabaldo, Edoardo, 1990, et al. (författare)
  • SQUID magnetometer based on Grooved Dayem nanobridges and a flux transformer
  • 2020
  • Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 30:7
  • Tidskriftsartikel (refereegranskat)abstract
    • We report noise measurements performed on a superconducting quantum interference devices (SQUID) magnetometer implementing YBa2Cu3O7-δ grooved Dayem nanobridges as weak links. The magnetometer is realized by coupling the SQUID to a flux transformer with a two-level coupling scheme using a flip-chip approach to improve the effective area of the SQUID. The measured magnetic flux noise of the SQUID is as low as 10 μ Φ0/√Hz, which corresponds to an equivalent magnetic field white noise of 60 fT/√Hz above 100 Hz at T=77 K.
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