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- Höglund, Linda, 1974-, et al.
(author)
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Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors
- 2009
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In: Applied Physics Letters. - New York : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:5, s. 053503-
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Journal article (peer-reviewed)abstract
- Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. By selectively increasing the electron population in the different quantum dot energy levels, the low temperature photocurrent peaks observed at 120 and 148 meV, could be identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively. With efficient filling of the quantum dot energy levels through simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10.
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