| 1. |
- Egard, Mikael, et al.
(författare)
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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- 2013
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Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
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| 2. |
- Egard, Mikael, et al.
(författare)
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
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| 3. |
- Egard, Mikael, et al.
(författare)
-
High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011
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Ingår i: 2011 IEEE International Electron Devices Meeting (IEDM). - 9781457705052
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Konferensbidrag (refereegranskat)abstract
- In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
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| 4. |
- Egard, Mikael, et al.
(författare)
-
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:7, s. 970-972
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.
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| 5. |
- Egard, Mikael, et al.
(författare)
-
Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
- 2011
-
Ingår i: 69th Device Research Conference, DRC 2011 - Conference Digest. - 9781612842417
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Konferensbidrag (refereegranskat)abstract
- III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-¿ gate oxides.
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| 6. |
- Nilsson, Henrik, et al.
(författare)
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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:6
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Tidskriftsartikel (refereegranskat)abstract
- We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]
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| 7. |
- Ohlsson, Lars, et al.
(författare)
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Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
- 2010
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Ingår i: [Host publication title missing]. ; , s. 253-256
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Konferensbidrag (refereegranskat)abstract
- Methods to achieve admittance matching of rectangular dielectric resonator antennas intended for 60~GHz impulse radio are reported. The motivation is to find a suitable antenna that may be integrated in the V-band gated tunnel diode wavelet generator, replacing its tank circuit and forming a low complexity transmitter. Probed one- and two-port scattering parameter measurements have been performed to characterise the fabricated antennas. Changing the feed structure from a tapered dipole to an offset fed and tapered slot, a change from capacitive to inductive characteristics is observed, and the matching to the gated tunnel diode is improved. Deembedded admittance resonance frequencies of fabricated antennas were found at 53.6 and 52.2~GHz for dipole and slot fed antennas, respectively. Characterising the transmission link between dipole fed antennas, a maximum antenna gain of 10.5~dBi and a 3~dB power bandwidth of 1.5~GHz were found at 53.3~GHz.
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| 8. |
- Roll, Guntrade, et al.
(författare)
-
RF and DC Analysis of Stressed InGaAs MOSFETs
- 2014
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 35:2, s. 181-183
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.
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| 9. |
- Roll, Guntrade, et al.
(författare)
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RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
- 2013
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Ingår i: 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. - 9781479903504 ; , s. 38-41
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Konferensbidrag (refereegranskat)abstract
- A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.
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| 10. |
- Wernersson, Lars-Erik, et al.
(författare)
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III-V Nanowires-Extending a Narrowing Road
- 2010
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Ingår i: Proceedings of the IEEE. - 0018-9219. ; 98:12, s. 2047-2060
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.
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