| 1. |
- Tang, Shi, et al.
(författare)
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Design rules for light-emitting electrochemical cells delivering bright luminance at 27.5 percent external quantum efficiency
- 2017
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Ingår i: Nature Communications. - : Nature Publishing Group. - 2041-1723. ; 8
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Tidskriftsartikel (refereegranskat)abstract
- The light-emitting electrochemical cell promises cost-efficient, large-area emissive applications, as its characteristic in-situ doping enables use of air-stabile electrodes and a solution-processed single-layer active material. However, mutual exclusion of high efficiency and high brightness has proven a seemingly fundamental problem. Here we present a generic approach that overcomes this critical issue, and report on devices equipped with air-stabile electrodes and outcoupling structure that deliver a record-high efficiency of 99.2 cd A(-1) at a bright luminance of 1910 cd m(-2). This device significantly outperforms the corresponding optimized organic light-emitting diode despite the latter employing calcium as the cathode. The key to this achievement is the design of the host-guest active material, in which tailored traps suppress exciton diffusion and quenching in the central recombination zone, allowing efficient triplet emission. Simultaneously, the traps do not significantly hamper electron and hole transport, as essentially all traps in the transport regions are filled by doping.
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| 2. |
- van Reenen, Stephan, et al.
(författare)
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Salt concentration effects in planar light-emitting electrochemical cells
- 2011
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Ingår i: Advanced Functional Materials. - : Wiley-VCH Verlagsgesellschaft. - 1616-301X .- 1616-3028. ; 21:10, s. 1795-1802
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Tidskriftsartikel (refereegranskat)abstract
- Incorporation of ions in the active layer of organic semiconductor devices may lead to attractive device properties like enhanced injection and improved carrier transport. In this paper, we investigate the effect of the salt concentration on the operation of light-emitting electrochemical cells, using experiments and numerical calculations. The current density and light emission are shown to increase linearly with increasing ion concentration over a wide range of concentrations. The increasing current is accompanied by an ion redistribution, leading to a narrowing of the recombination zone. Hence, in absence of detrimental side reactions and doping-related luminescence quenching, the ion concentration should be as high as possible.
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| 3. |
- Melianas, Armantas, et al.
(författare)
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Photogenerated Carrier Mobility Significantly Exceeds Injected Carrier Mobility in Organic Solar Cells
- 2017
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Ingår i: Advanced Energy Materials. - : John Wiley & Sons. - 1614-6832 .- 1614-6840. ; 7:9
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Tidskriftsartikel (refereegranskat)abstract
- Charge transport in organic photovoltaic (OPV) devices is often characterized by space-charge limited currents (SCLC). However, this technique only probes the transport of charges residing at quasi-equilibrium energies in the disorder-broadened density of states (DOS). In contrast, in an operating OPV device the photogenerated carriers are typically created at higher energies in the DOS, followed by slow thermalization. Here, by ultrafast time-resolved experiments and simulations it is shown that in disordered polymer/fullerene and polymer/polymer OPVs, the mobility of photogenerated carriers significantly exceeds that of injected carriers probed by SCLC. Time-resolved charge transport in a polymer/polymer OPV device is measured with exceptionally high (picosecond) time resolution. The essential physics that SCLC fails to capture is that of photogenerated carrier thermalization, which boosts carrier mobility. It is predicted that only for materials with a sufficiently low energetic disorder, thermalization effects on carrier transport can be neglected. For a typical device thickness of 100 nm, the limiting energetic disorder is σ ≈71 (56) meV for maximum-power point (short-circuit) conditions, depending on the error one is willing to accept. As in typical OPV materials the disorder is usually larger, the results question the validity of the SCLC method to describe operating OPVs.
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| 4. |
- Abdalla, Hassan, 1987-
(författare)
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Charge and Energy Transport in Disordered Organic Semiconductors
- 2018
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Improvement of the performance of organic disordered semiconductors (OSC) is driven by the understanding of the underlying charge transport mechanisms and systematic exploitation thereof. There exists a multitude of materials and material systems based on polymers and small molecules with promising performance for use in organic light emitting diodes, photovoltaics, organic field-effect transistors and thermoelectrics. However, universal understanding of many classes of these materials has eluded researchers, due to their broad spectrum of morphologies, molecular structures and electrical properties. Building on the large body of existing models, this thesis deals with charge transport phenomena from the perspective of transport energetics, by studying the interplay between a few but important concepts commonly accepted to play a crucial role in all OSC materials; energetic disorder, charge carrier hopping and Coulomb interactions. The influence of these concepts on the energetic landscape through which charge carriers move and how this translates to experimentally observed transport phenomena are studied by a combination of experimental work, kinetic Monte Carlo (MC) simulations and empirical and analytical models.The universal scaling and collapse of the temperature and electric field dependence of the conductivity of PEDOT:PSS to a single curve is shown to be functionally equivalent to the scaling of the effective temperature, which describes the effect of field heating as a broadening of the charge carrier distribution. From numerical investigation of the energy relaxation, an empirical model is developed that relates the physical meaning behind both concepts to the heat balance between Joule heating of the carrier distribution via the effective temperature and energy loss to the lattice. For this universal description to be applicable a strongly energy- dependent density of states (DOS) as well as Coulomb interactions and large carrier concentrations are needed.Chemical doping is a common way of improving charge transport in OSC and is also beneficial for energy transport, which combined leads to an increased thermoelectric power factor. The ensuing thermoelectric investigations not only showed the potential of these materials for use in thermoelectric generators, but are also helpful in unraveling charge transport mechanism as they give direct insight into the energetics of a material. Interestingly, doped OSC exhibit the same universal power-law relationship between thermopower and conductivity, independent of material system or doping method, pointing towards a common energy and charge transport mechanism. In this thesis an analytical model is presented, which reproduces said universal power-law behavior and is able to attribute it to Variable Range Hopping (VRH) or a transition between Nearest Neighbour Hopping (NNH) and VRH at higher concentrations. This model builds on an existing three- dimensional hopping formalism that includes the effect of the attractive Coulomb potential of ionized dopants that leads to a broadening of the DOS. Here, this model is extended by including the energy offset between host and dopant material and is positively tested against MC simulations and a set of thermoelectric measurements covering different material groups and doping mechanisms.Organic field effect transistors (OFETs) have become increasingly comparable in electrical mobility to their inorganic (silicon) counterparts. The spatial extent of charge transport in OFETs has been subject to debate since their inception with many experimental, numerical and analytical studies having been undertaken. Here it is shown that the common way of analyzing the dimensionality of charge transport in OFETs may be prone to misinterpretations. Instead, the results in this thesis suggest that charge transport in OFETs is, in fact, quasi- two-dimensional (2D) due to the confinement of the gate field in addition to a morphology-induced preferred in-plane direction of the transport. The inherently large charge carrier concentrations in OFETs in addition to the quasi-2D confinement leads to increased Coulomb interaction between charge carriers as compared to bulk material, leading to a thermoelectric behavior that deviates from doped organic systems. At very large concentrations interesting charge transport phenomena are observed, including an unexpected simultaneous increase of the concentration dependence and the magnitude of the mobility, the appearance of a negative transconductance, indicating a transition to an insulating Mott-Hubbard phase. The experimental and numerical results in this thesis relate these phenomena the intricacies of the interplay between Coulomb interactions, energetic disorder and charge carrier hopping.
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| 5. |
- Abdalla, Hassan, et al.
(författare)
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Investigation of the dimensionality of charge transport in organic field effect transistors
- 2017
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 95:8
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Tidskriftsartikel (refereegranskat)abstract
- Ever since the first experimental investigations of organic field effect transistors (OFETs) the dimensionality of charge transport has alternately been described as two dimensional (2D) and three dimensional (3D). More recently, researchers have turned to an analytical analysis of the temperature-dependent transfer characteristics to classify the dimensionality as either 2D or 3D as well as to determine the disorder of the system, thereby greatly simplifying dimensionality investigations. We applied said analytical analysis to the experimental results of our OFETs comprising molecularly well-defined polymeric layers as the active material as well as to results obtained from kinetic Monte Carlo simulations and found that it was not able to correctly distinguish between 2D and 3D transports or give meaningful values for the disorder and should only be used for quasiquantitative and comparative analysis. We conclude to show that the dimensionality of charge transport in OFETs is a function of the interplay between transistor physics and morphology of the organic material.
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| 6. |
- Abdalla, Hassan, et al.
(författare)
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Range and energetics of charge hopping in organic semiconductors
- 2017
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 96:24
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Tidskriftsartikel (refereegranskat)abstract
- The recent upswing in attention for the thermoelectric properties of organic semiconductors (OSCs) adds urgency to the need for a quantitative description of the range and energetics of hopping transport in organic semiconductors under relevant circumstances, i.e., around room temperature (RT). In particular, the degree to which hops beyond the nearest neighbor must be accounted for at RT is still largely unknown. Here, measurements of charge and energy transport in doped OSCs are combined with analytical modeling to reach the univocal conclusion that variable-range hopping is the proper description in a large class of disordered OSC at RT. To obtain quantitative agreement with experiment, one needs to account for the modification of the density of states by ionized dopants. These Coulomb interactions give rise to a deep tail of trap states that is independent of the materials initial energetic disorder. Insertion of this effect into a classical Mott-type variable-range hopping model allows one to give a quantitative description of temperature-dependent conductivity and thermopower measurements on a wide range of disordered OSCs. In particular, the model explains the commonly observed quasiuniversal power-law relation between the Seebeck coefficient and the conductivity.
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| 7. |
- Andringa, Anne-Marije, et al.
(författare)
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Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors
- 2012
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 101:15
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Tidskriftsartikel (refereegranskat)abstract
- Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO2 field-effect sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758697]
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| 8. |
- Asadi, Kamal, et al.
(författare)
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Organic ferroelectric opto-electronic memories
- 2011
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Ingår i: Materials Today. - : ELSEVIER SCI LTD. - 1369-7021 .- 1873-4103. ; 14:12, s. 592-599
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Forskningsöversikt (refereegranskat)abstract
- Organic electronics have emerged as a promising technology for large-area micro-electronic applications, such as rollable displays(1), electronic paper(2), contactless identification transponders(3,4), and smart labels(5). Most of these applications require memory functions; preferably a non-volatile memory that retains its data when the power is turned off, and that can be programmed, erased, and read-out electrically.
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| 9. |
- Bernard, L., et al.
(författare)
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Study of the morphology of organic ferroelectric diodes with combined scanning force and scanning transmission X-ray microscopy
- 2018
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Ingår i: Organic electronics. - : ELSEVIER SCIENCE BV. - 1566-1199 .- 1878-5530. ; 53, s. 242-248
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Tidskriftsartikel (refereegranskat)abstract
- Organic ferroelectric diodes attract increasing interest as they combine non-destructive data read-out and low cost fabrication, two requirements in the development of novel non-volatile memory elements. The macroscopic electrical characteristics and performances of such devices strongly depend on their structural properties. Various studies of their global microscopic morphology have already been reported. Here, a multi-technique approach including different scanning force and X-ray microscopies permitted to reveal and locally study nanometer-scale unexpected sub-structures within a P(VDF-TrFE):F8BT ferroelectric diode. The strong impact of these structures on the local polarizability of the ferroelectric is shown. Two alternative fabrication methods are proposed that prevent the formation of these structures and demonstrate improved macroscopic device performances such as endurance and ON/OFF ratio.
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| 10. |
- Bobbert, PA, et al.
(författare)
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Exchange-correlation energy of a hole gas including valence band coupling
- 1997
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Ingår i: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 56:7, s. 3664-3671
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Tidskriftsartikel (refereegranskat)abstract
- We have calculated an accurate exchange-correlation energy of a hole gas, including the complexities related to the valence band coupling as occurring in semiconductors like GaAs, but excluding the band warping. A parametrization for the dependence on the density and the ratio between light-and heavy-hole masses is given. We apply our results to a hole gas in an AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well and calculate the two-dimensional band structure and the band-gap renormalization. The inclusion of the valence band coupling in the calculation of the exchange-correlation potentials for holes and electrons leads to a much better agreement between theoretical and experimental data than when it is omitted.
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