| 1. |
- Pettersson, Håkan, et al.
(författare)
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Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
- 2004
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:4, s. 1829-1831
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Tidskriftsartikel (refereegranskat)abstract
- The results from photoconductivity (PC) measurements on InAs dots embedded in InP are presented. The PC technique is recently applied to the study of InAs dots embedded in matrices of GaAs and Al0.3Ga0.7As matrix, respectively. It is demonstrated that this technique reveals important new physical insight into the electronic structure of the InAs/InP dots, information that cannot easily be obtained by other techniques.
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| 2. |
- Pettersson, Håkan, et al.
(författare)
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Optically induced charge storage and current generation in InAs quantum dots
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 65:7, s. 0733041-0733044
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Tidskriftsartikel (refereegranskat)abstract
- We report on optically induced charge storage effects and current generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.
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| 3. |
- Pettersson, Håkan, et al.
(författare)
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Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP
- 2005
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Ingår i: Microelectronics Journal. - Amsterdam : Elsevier. - 0026-2692. ; 36:3-6, s. 227-230
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we report on an overview of recent results from Fourier transform photocurrent (FTPC) measurements in the infrared spectral region on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In interband PC, clear signals related to the dots are observed. Comparing the PC- and PL spectra, we observe that the fundamental transition is absent in the PC spectra, which we interpret in terms of Pauliblocking due to a filled electron ground state of the dots. Our results furthermore suggest that an Auger process is involved in forming the interband PC signal. In intersubband PC, peaks related to transitions from the dots' ground- and first excited states to the conduction band of the matrix are observed. Using a novel approach of combining FTPC with illumination from an additional external non-modulated light source, we have measured the spectral distribution of photoionization of excitons in quantum dots and found an exciton binding energy in good agreement with theoretical calculations.
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| 4. |
- Pettersson, Håkan, et al.
(författare)
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Photoexcitation of excitons in self-assembled quantum dots
- 2004
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 85:21, s. 5046-5048
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Tidskriftsartikel (refereegranskat)abstract
- Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by comparison with theoretical calculations that it is consistent with an exciton binding energy of 20 meV.
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| 5. |
- Borgström, Magnus, et al.
(författare)
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Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:23, s. 4830-4832
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Tidskriftsartikel (refereegranskat)abstract
- We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.
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