| 1. |
- Armakavicius, Nerijus, et al.
(författare)
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Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
- 2017
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 421, s. 357-360
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Tidskriftsartikel (refereegranskat)abstract
- Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmￜￜￜ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmￜￜￜ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
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| 2. |
- He, Hans, 1989, et al.
(författare)
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The performance limits of epigraphene Hall sensors doped across the Dirac point
- 2020
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:22
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work, we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities of S-V=0.23V/(VT) and S-I=1440V/(AT), with magnetic field detection limits down to B-MIN=27 nT/root Hz at 20kHz. Thermally stabilized devices demonstrate operation up to 150 degrees C with S-V=0.12V/(VT), S-I=300V/(AT), and B-MIN similar to 100 nT/root Hz at 20kHz. Our work demonstrates that epigraphene doped close to the Dirac point could potentially outperform III-V Hall elements in the extended and military temperature ranges.
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| 3. |
- Kim, Kyung Ho, 1984, et al.
(författare)
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Chemical Sensing with Atomically Thin Platinum Templated by a 2D Insulator
- 2020
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Ingår i: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 7:12
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Tidskriftsartikel (refereegranskat)abstract
- Boosting the sensitivity of solid‐state gas sensors by incorporating nanostructured materials as the active sensing element can be complicated by interfacial effects. Interfaces at nanoparticles, grains, or contacts may result in nonlinear current–voltage response, high electrical resistance, and ultimately, electric noise that limits the sensor read‐out. This work reports the possibility to prepare nominally one atom thin, electrically continuous platinum layers by physical vapor deposition on the carbon zero layer (also known as the buffer layer) grown epitaxially on silicon carbide. With a 3–4 Å thin Pt layer, the electrical conductivity of the metal is strongly modulated when interacting with chemical analytes, due to charges being transferred to/from Pt. The strong interaction with chemical species, together with the scalability of the material, enables the fabrication of chemiresistor devices for electrical read‐out of chemical species with sub part‐per‐billion (ppb) detection limits. The 2D system formed by atomically thin Pt on the carbon zero layer on SiC opens up a route for resilient and high sensitivity chemical detection, and can be the path for designing new heterogenous catalysts with superior activity and selectivity.
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| 4. |
- Makarovsky, O., et al.
(författare)
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Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots
- 2017
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 4:3
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Tidskriftsartikel (refereegranskat)abstract
- We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 x 10(13) cm(-2) and 400 meV, respectively.
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| 5. |
- He, Hans, et al.
(författare)
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Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene
- 2022
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Ingår i: Applied Physics Letters. - : American Institute of Physics Inc.. - 0003-6951 .- 1077-3118. ; 120:19
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Tidskriftsartikel (refereegranskat)abstract
- We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with a peak external quantum efficiency of η ∼85% for wavelengths λ = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. © 2022 Author(s).
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| 6. |
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| 7. |
- Karimi, Bayan, et al.
(författare)
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Electron-phonon coupling of epigraphene at millikelvin temperatures measured by quantum transport thermometry
- 2021
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 118:10
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating a nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphene's sheet conductance as an in situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the T4 dependence characteristic for a clean two-dimensional conductor. Based on our measurement, we predict the noise-equivalent power of ∼ 10 - 22 W / Hz of the epigraphene bolometer at the low end of achievable temperatures.
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| 8. |
- Karlsson, M., et al.
(författare)
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Wafer-scale epitaxial graphene on SiC for sensing applications
- 2015
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE - The International Society for Optics and Photonics. - 9781628418903
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Konferensbidrag (refereegranskat)abstract
- The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'™'™ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene'™s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer'™s method were also fabricated for comparison.
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| 9. |
- Polley, Craig Michael, 1984, et al.
(författare)
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Origin of the π -band replicas in the electronic structure of graphene grown on 4H -SiC(0001)
- 2019
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9969 .- 2469-9950. ; 99:11
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Tidskriftsartikel (refereegranskat)abstract
- The calculated electronic band structure of graphene is relatively simple, with a Fermi surface consisting only of six Dirac cones in the first Brillouin zone-one at each (K) over bar. In contrast, angle-resolved photoemission measurements of graphene grown on SiC(0001) often show six satellite Dirac cones surrounding each primary Dirac cone. Recent studies have reported two further Dirac cones along the (Gamma) over bar-(K) over bar line, and argue that these are not photoelectron diffraction artifacts but real bands deriving from a modulation of the ionic potential in the graphene layer. Here we present measurements using linearly polarized synchrotron light which show all of these replicas as well as several additional ones. Using information obtained from dark corridor orientations and angular warping, we demonstrate that all but one of these additional features-including those previously assigned as real initial-state bands-are possible to explain by simple final-state photoelectron diffraction.
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| 10. |
- Ahmad, Mohammed Metwally Gomaa, et al.
(författare)
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Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films
- 2017
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 64, s. 32-38
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Tidskriftsartikel (refereegranskat)abstract
- Nickel oxide thin films were deposited by a simple and low-cost spray pyrolysis technique using three different precursors: nickel nitrate, nickel chloride, and nickel acetate on corning glass substrates. X-ray diffraction show that the NiO films are polycrystalline and have a cubic crystal structure, although predominantly with a preferred 111-orientation in the growth direction and a random in-plane orientation. The deconvolution of the Ni 2p and O 1s core level X-ray photoelectron-spectra of nickel oxides produced by using different precursors indicates a shift of the binding energies. The sprayed NiO deposited from nickel nitrate has an optical transmittance in the range of 60-65% in the visible region. The optical band gap energies of the sprayed NiO films deposited from nickel nitrate, nickel chloride and nickel acetate are 3.5, 3.2 and 3.43 eV respectively. Also, the extinction coefficient and refractive index of NiO films have been calculated from transmittance and reflectance measurements. The average value of refractive index for sprayed films by nickel nitrate, nickel chloride and nickel acetate are 2.1, 1.6 and 1.85 respectively. It is revealed that the band gap and refractive index of NiO films by using nickel nitrate corresponds to the commonly reported values. We attribute the observed behavior in the optical band gap and optical constants as due to the change of the Ni/O ratio.
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