↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Tyck till om SwePub Sök här!

Träfflista för sökning "hsv:(TEKNIK OCH TEKNOLOGIER) hsv:(Annan teknik) ;pers:(Engström Olof 1943)"

Search: hsv:(TEKNIK OCH TEKNOLOGIER) hsv:(Annan teknik) > Engström Olof 1943

Result 1-10 of 55

Sort/group result

Sort by: Hits per page:

Enumeration	Reference	Cover	Find
1.	Engström, Olof, 1943, et al. (author) Charging phenomena at the interface between high-k dielectrics and SiOx interlayers 2009 In: 8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited). Conference paper (peer-reviewed)
2.	Engström, Olof, 1943, et al. (author) Confined energy states in quantum dots detected by a resonant differential capacitance method 2009 In: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 95:1, s. 013104- Journal article (peer-reviewed)
3.	Engström, Olof, 1943 (author) Limitations in future high-k materials 2009 In: NANOSIL Workshop at ESSDERC, Athens, Sept. 14 - 18, 2009 (Invited). Conference paper (peer-reviewed)
4.	Kaniewska, M, et al. (author) Characterization of deep levels and quantum confined energy levels in InAs/GaAs quantum dot structures by electrical methods 2008 In: ICCE 16, Kunming, China, July 2008. Conference paper (peer-reviewed)
5.	Kaniewska, M, et al. (author) Classification of energy levels in quantum dot structures by means of depletion layer spectroscopy methods 2009 In: 13th Internation Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Wheeling, West Virginia, USA, September 13-17, 2009 (Invited). Conference paper (peer-reviewed)
6.	Lu, Y, et al. (author) Leakage current effects on C-V plots of high-k MOS capacitors 2008 In: WODIM, Berlin, June 2008. Conference paper (peer-reviewed)
7.	Mitrovic, I. Z., et al. (author) Quest for an optimal gadolinium silicate gate dielectric stack 2008 In: 39th IEEE Semiconductor Interface Specialists Conference (SISC 2009), December 11-13, 2008. Conference paper (peer-reviewed)
8.	Piscator, Johan, 1977, et al. (author) Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems 2009 In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:5, s. 054510- Journal article (peer-reviewed)abstract Admittance spectroscopy is extended for measuring capacitance and conductance on metal-oxide-semiconductor (MOS) structures as a function of gate voltage, frequency, and temperature. An automatic setup has been designed for collecting data along these dimensions in one measurement cycle. The theory for admittance spectroscopy has been developed by starting from basic charge carrier statistics. Using numerical integration of energy dependent parameters instead of the commonly used analytical solution, conductance dispersion curves are obtained which do not need to be adjusted by assuming lateral surface potential variations at the oxide-semiconductor interface. Also, we find that interface state densities extracted by using traditional methods are four times lower than those obtained by using our theory. Experimental data presented in three-dimensional plots are compared with theoretical calculations, revealing the possibilities and limitations of the conductance method.
9.	Engström, Olof, 1943, et al. (author) Capture cross sections for holes at LaLuO/Si interfaces 2010 In: Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 29, Bratislava, June 28 - 30 2010. Conference paper (peer-reviewed)
10.	Engström, Olof, 1943, et al. (author) Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited) 2010 In: Journal of Telecommunications and Information Technology. - 1509-4553 .- 1899-8852. ; 1, s. 10- Journal article (peer-reviewed)

Skapa referenser, mejla, bekava och länka

Permalink

Result 1-10 of 55

Refine your search

Type of publication: conference paper (33); journal article (21); book chapter (1)

Type of content: peer-reviewed (50); other academic/artistic (5)

Author/Editor: Engström, Olof, ... (55)Undo refine; Kaniewska, M (26); Kaczmarczyk, M (18); Raeissi, Bahman, 197 ... (16); Piscator, Johan, 197 ... (16); Gottlob, H. D. B. (12); show more...; Hall, S. (11); Hurley, P. K. (11); Cherkaoui, K. (10); Jung, W. (6); Lemme, M. C. (6); Schmidt, M. (6); Surma, B (6); Buiu, O. (6); Mitrovic, I. Z. (6); Lemme, Max C., 1970- (4); Kasper, E. (4); Karmous, A. (4); Lu, Y (3); O’Connor, E. (3); Davey, W.M. (3); Lin, S (2); Peaker, A.R. (2); Kurz, H. (2); Osten, H. J. (2); Werner, M. (1); Östling, Mikael (1); Lai, Zonghe, 1948 (1); Balestra, F. (1); Schubert, J (1); Dubois, E. (1); Parker, E. (1); Leadley, D. (1); Mantl, S. (1); Clerc, R. (1); Cristoloveanu, S. (1); Raskin, J. P. (1); Ionescu, A. (1); Moselund, K. E. (1); Boucart, K. (1); Baus, M. (1); Spangenberg, B. (1); Sangiorgi, E. (1); Ghibaudo, G. (1); Flandre, D. (1); Stefani, A (1); Ducroquet, F. (1); Lopes, J. M. J. (1); Werner, Maria, 1957 (1); Eghtedari, Ali (1); show less...

University: Chalmers University of Technology (55); Royal Institute of Technology (4)

Language: English (55)

Research subject (UKÄ/SCB): Engineering and Technology (55); Natural sciences (2)

Year

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

Copyright © LIBRIS - National Library Systems
LIBRIS.kb.se

pil uppåt

Close

Copy and save the link in order to return to this view