| 1. |
- Bhadoria, Shubhangi, et al.
(author)
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Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters : An Overview
- 2023
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In: IEEE transactions on power electronics. - : Institute of Electrical and Electronics Engineers Inc.. - 0885-8993 .- 1941-0107. ; 38:3, s. 3569-3589
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Journal article (peer-reviewed)abstract
- With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the overcurrent performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials, which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for overcurrent related temperatures in excess of 200°C are discussed. This article also discusses potential technologies, which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase-change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase-change materials, which can be considered for high-temperature operations.
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| 2. |
- Risseh, Arash, 1980-, et al.
(author)
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Design of a Thermoelectric Generator for Waste Heat Recovery Application on a Drivable Heavy Duty Vehicle
- 2017
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In: SAE International Journal of Commercial Vehicles. - : SAE International. - 1946-391X .- 1946-3928. ; 10:1, s. 26-44
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Journal article (peer-reviewed)abstract
- The European Union’s 2020 target aims to be producing 20 % of its energy from renewable sources by 2020, to achieve a 20 % reduction in greenhouse gas emissions and a 20 % improvement in energy efficiency compared to 1990 levels. To reach these goals, the energy consumption has to decrease which results in reduction of the emissions. The transport sector is the second largest energy consumer in the EU, responsible for 25 % of the emissions of greenhouse gases caused by the low efficiency (<40 %) of combustion engines. Much work has been done to improve that efficiency but there is still a large amount of fuel energy that converts to heat and escapes to the ambient atmosphere through the exhaust system. Taking advantage of thermoelectricity, the heat can be recovered, improving the fuel economy. A thermoelectric generator (TEG) consists of a number of thermoelectric elements, which advantageously can be built into modules, arranged thermally and electrically, in a way such that the highest possible thermal power can be converted into electrical power. In a unique waste heat recovery (WHR) project, five international companies and research institutes cooperated and equipped a fully drivable Scania prototype truck with two TEGs. The entire system, from the heat transfer in the exchangers to the electrical power system, was simulated, built and evaluated. The primary experimental results showed that approximately 1 kW electrical power could be generated from the heat energy. In this paper the entire system from design to experimental results is presented.
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| 3. |
- Singh, B. P., et al.
(author)
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Analysis of the Performance of Different Packaging Technologies of SiC Power Modules during Power Cycling Test
- 2023
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In: 2023 29TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS, THERMINIC. - : Institute of Electrical and Electronics Engineers (IEEE).
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Conference paper (peer-reviewed)abstract
- Commercialization of SiC MOSFETs and electrification of the automotive sector has resulted in the accelerated development of power semiconductor devices. To take the most advantage of the SiC properties and make the power semiconductor modules automotive graded, the power module packaging technologies are developing at a rapid pace. New materials are being introduced and more innovative ways are being investigated to operate the SiC die at high temperatures while maintaining high reliability. Silver (Ag) sinter, due to its superior properties, has been introduced as a state-of-the-art die-attaching technology, while different ways are being investigated to either eliminate the aluminium (Al) bondwires or replace them with copper (Cu) counterparts. In this study, we will use the Finite Element (FE) method to investigate the impact of different packaging aspects like using copper foil and Ag sinter on thermal and mechanical performance of the power module. We will also investigate the effect of different packaging on power module reliability.
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| 4. |
- Risseh, Arash, 1980-, et al.
(author)
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Electrical performance of directly attached SiC power MOSFET bare dies in a half-bridge configuration
- 2017
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In: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. - Taiwan : Institute of Electrical and Electronics Engineers (IEEE). - 9781509051571 ; , s. 417-421
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Conference paper (peer-reviewed)abstract
- The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover, the parasitic inductances at the input-terminal together with the Miller capacitance generate oscillations causing instability and additional losses. In order to eliminate the package parasitic inductance, four 1.2kV SiC-MOSFET bare dies, two in parallel in each position, were directly attached to a PCB sandwich designed as a half bridge. The obtained structure forms a planar power module. From ANSYS Q3D simulations it was found that the parasitic inductance between drain and source for each transistor in the proposed planar module could be reduced 92 % compared to a TO247 package. The planar module was also tested as a dc-dc converter. Switching waveforms from these experiments are also presented
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| 5. |
- Sadik, Diane-Perle, et al.
(author)
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Analysis of Parasitic Elements of SiC Power Modules with Special Emphasis on Reliability Issues
- 2016
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In: 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781467395502 - 9781467383936 ; , s. 1018-1023
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Conference paper (peer-reviewed)abstract
- Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic elements have been extracted. The model is validated through experiments. An analysis of the impact of these parasitic elements on the gate-source voltage on the chip has been performed for both low switching speeds and high switching speeds. These results reveal potential reliability issues for the gate-oxide if higher switching speeds are targeted.
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| 6. |
- Sadik, Diane-Perle, 1988-, et al.
(author)
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Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations
- 2016
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 9783035710434 ; , s. 595-598
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Conference paper (peer-reviewed)abstract
- The temperature evolution during a short-circuit in the die of three different Silicon Carbide 1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructed structure of commercially available devices. The location of the hottest point in the device is compared. Finally, the analysis supports the necessity to turn off short-circuit events rapidly in order to protect the device after a fault.
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| 7. |
- Schöner, Adolf, et al.
(author)
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Fabrication of a SiC double gate vertical channel jfet and it's application in power electronics
- 2012
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In: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781607683513 ; , s. 45-52
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Conference paper (peer-reviewed)abstract
- The fabrication process of an innovative epitaxial trench JFET with vertical channel and double gate control is reviewed. Due to the excellent doping and thickness control of the epitaxial regrowth techniques, the sub-micron channel can be tailored for normally-on and -off operation. Due to the vertical channel design the epitaxial trench JFETs have narrow cell pitch for high-density power integration and high saturation current capabilities. The excellent performance of these fabricated and packaged JFET devices is demonstrated with on-wafer measurements and power switching tests. High current conduction tests are performed at room temperature and elevated temperatures of 125°C with switching frequencies of 30 kHz and 200 kHz.
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| 8. |
- Zhang, Yafan, et al.
(author)
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Investigation of a Finned Baseplate Material and Thickness Variation for Thermal Performance of a SiC Power Module
- 2014
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In: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014. - : IEEE Computer Society. - 9781479947904
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Conference paper (peer-reviewed)abstract
- A simplified transient computational fluid dynamics model of an automotive three-phase double-side liquid cooled silicon carbide power inverter, including pin-fin baseplates, has been developed and qualified for parametric studies. Effective heat transfer coefficients have been extracted from the detailed pin-fin baseplate model for two coolant volume flow rates 2 l/min and 6 l/min, at the coolant temperature 105 degrees C. The inverter model includes temperature dependent heat losses of SiC transistors and diodes, calculated for two driving cycles. Baseplate materials such as copper, aluminum-silicon carbide metal matrix composite, aluminium alloy 6061 as well as virtual materials have been evaluated in the parametric studies. Thermal conductivity, specific heat and density have been varied as well as thickness of the finned baseplates (1 to 3 mm). A trade-off between temperature of SiC chips and baseplate weight has been investigated by means of Pareto optimization. The main results of the parametric studies include a weak dependence (1 to 3 degrees C) of the chip temperature on baseplate thickness. Furthermore, switching e.g. between copper and AlSiC results in 5 to 8 degrees C increase of the chip temperature, at 65 to 70 % baseplate weight reduction.
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| 9. |
- Zhang, Yafan, et al.
(author)
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Simulation-driven development of a novel SiC embedded power module design concept
- 2017
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In: 2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2017. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509043446
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Conference paper (peer-reviewed)abstract
- Silicon carbide embedded power modules enable a compact and cost competitive packaging solution for high-switching frequency and high-temperature operation applications. Power module packaging technologies span several engineering domains. At the early design stage, simulation-driven development is necessary to shorten the design period and reduce the design cost. This paper presents a novel design concept of a three-phase embedded power module (1200 V, 20 A, 55 mm × 36 mm × 0.808 mm) including silicon carbide metal-oxide-semiconductor field-effect transistor and antiparallel diode dies. Based on the E/CAD design data different layer built-up designs have been tested against thermal, mechanical, and electrical behavior. The obtained simulation data then have been evaluated against a commercial available power module (Motion Smart Power Module SMP33) which utilizes over mold direct bonded copper substrates with soldered semiconductor dies and bond wire contacts. Compared to the conventional module, the loop conductive interconnection parasitic inductance and resistance of the design concept (Vdc+ to Vdc-) reduces approximately by 88 % and 72 %, respectively. The average junction to case thermal resistance has been improved by approximately more than 10 % even though the total package size reduces by approximately 88 %. Furthermore, the contours of deformation and stresses have been investigated for the design concept in the thermomechanical simulation.
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| 10. |
- Zhang, Yafan, et al.
(author)
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Thermomechanical Analysis and Characterization of a Press-Pack Structure for SiC Power Module Packaging Applications
- 2017
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In: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3950 .- 2156-3985. ; 7:7, s. 1089-1100
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Journal article (peer-reviewed)abstract
- This paper presents an experimental methodology for the characterization of thermomechanical displacement and friction properties in a free-floating press-pack structure, and evaluation of the tensile stress on the semiconductor die through simulation of different mechanical and thermal loading conditions. The press-pack structure consists of a single silver-metallized (1 μm) silicon carbide die (400 μm) in contact with rhodium-coated (0.4 μm) molybdenum square plates. The thermomechanical displacements in the press-pack structure have been obtained using the digital image correlation technique, and the mean random error has been $± $0.1 μm, which is approximately 10 ppm of the measured length (10.5 mm). The developed experimental method has led to an analytical estimation of friction coefficients on the interfaces' silicon carbide-molybdenum and molybdenum-copper. The results demonstrate that the thin silver layer behaves as a solid film lubricant. A 2-D finite-element model representing the experimental setup has been implemented. The difference in displacement between measurement and simulation is less than 8%. Furthermore, the coinfluence of the design parameters on the thermomechanical performance of the stacked structure has been analyzed through simulations. Finally, design guidelines to reduce the tensile stress on the silicon carbide die have been proposed regarding free-floating press-pack power electronics packaging.
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