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Atomically resolved...
Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC
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- Karlsson, Linda H. (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Hallen, Anders (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology, Sweden
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- Birch, Jens (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Persson, Per O A (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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(creator_code:org_t)
- Elsevier, 2016
- 2016
- Engelska.
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Ingår i: Materials letters (General ed.). - : Elsevier. - 0167-577X .- 1873-4979. ; 181, s. 325-327
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. (C) 2016 Elsevier B.V. All rights reserved.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
Nyckelord
- Ion implantation
- HRSTEM
- Dislocation loop
- Silicon carbide
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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