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Weak localization s...
Weak localization scattering lengths in epitaxial, and CVD graphene
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- Baker, A M R (författare)
- University of Oxford, England
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- Alexander-Webber, J A (författare)
- University of Oxford, England
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- Altebaeumer, T (författare)
- University of Oxford, England,National Phys Lab, England
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- Janssen, T J B M (författare)
- National Phys Lab, England
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- Tzalenchuk, A (författare)
- National Phys Lab, England
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- Lara Avila, Samuel, 1983 (författare)
- Chalmers, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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- Kubatkin, Sergey, 1959 (författare)
- Chalmers, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Lin, C-T (författare)
- Academic Sinica, Taiwan
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- Li, L-J (författare)
- Academic Sinica, Taiwan
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- Nicholas, R J (författare)
- University of Oxford, England
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(creator_code:org_t)
- American Physical Society, 2012
- 2012
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 86:23, s. 235441-
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Abstract
Ämnesord
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- Weak localization in graphene is studied as a function of carrier density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2) using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L-phi, L-i, and L-* on carrier density. We find no significant carrier dependence for L-phi, a weak decrease for L-i with increasing carrier density just beyond a large standard error, and a n(-1/4) dependence for L-*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity. DOI: 10.1103/PhysRevB.86.235441
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
- electronic-properties
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- art (ämneskategori)
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Baker, A M R
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Alexander-Webber ...
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Altebaeumer, T
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Janssen, T J B M
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Tzalenchuk, A
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Lara Avila, Samu ...
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visa fler...
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Kubatkin, Sergey ...
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Yakimova, Rosits ...
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Lin, C-T
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Li, L-J
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Nicholas, R J
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visa färre...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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Physical Review ...
- Av lärosätet
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Linköpings universitet
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Chalmers tekniska högskola