Developing Graphene based MMICs on SiC substrate

• This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

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kon (ämneskategori)

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