Reduced effective temperature of hot electrons in nano-sized metal-oxide-semiconductor field-effect transistors

Fu, Y.Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Gothenburg University, Göteborg, Sweden (författare)

Hot electron effects have been extensively studied in metal-oxide-semiconductor field-effect transistors (MOSFETs). The importance of these effects when the dimensions are drastically reduced has so far not been thoroughly investigated. The scope of this paper is therefore to present a detailed study of the effective temperature of excess electrons in nanoscale MOSFETs by solving coupled Schrödinger and Poisson equations. It is found that the increased doping levels and reduced junction depths lead to substantially higher local Fermi levels in the source and drain regions. As a result, the temperature difference between electrons injected into the drain and local electrons is reduced. The scaling of the gate oxide thickness, as well as the drain voltage furthermore reduces the electron temperature in the drain. The detrimental effects of hot electron injection are therefore expected to be decreased by scaling the MOSFET.

Willander, MagnusPhysical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Gothenburg University, Göteborg, Sweden(Swepub:liu)magwi72 (författare)
Pettersson, Håkan,1962-Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS),Halmstad University(Swepub:hh)hape (författare)
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Gothenburg University, Göteborg, SwedenHalmstad Embedded and Intelligent Systems Research (EIS) (creator_code:org_t)

Ingår i:Applied Physics ABerlin / Heidelberg : Springer Berlin/Heidelberg77:6, s. 799-8030947-83961432-0630

Av författaren/redakt...: Fu, Y.; Willander, Magnu ...; Pettersson, Håka ...

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