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Theoretical investi...
Theoretical investigation of energy shifts at the GaAs/Au interface
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- Karlsson, Krister, 1961- (författare)
- Chalmers University of Technology, Göteborg, Sweden
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- Nyqvist, O. (författare)
- Chalmers University of Technology, Göteborg, Sweden
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- Wendin, G. (författare)
- Chalmers University of Technology, Göteborg, Sweden
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(creator_code:org_t)
- Elsevier, 1988
- 1988
- Engelska.
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Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 67:4, s. 339-342
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have used an image screening model to calculate the shift of the Ga(3d−1) core-level distribution when a GaAs surface is covered with metal. Using the GaAs bulk dielectric constant we find a shift of 0.1 (0.18) eV with a mean free path of 25 (8) Å. These shifts are comparable to the measured ones,1 indicating that final-state (image) screening represents an important part of core-level shifts in the vicinity of the interface.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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