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Very high aspect ra...
Very high aspect ratio through-silicon vias (TSVs) fabricated using automated magnetic assembly of nickel wires
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- Fischer, Andreas C., 1982- (författare)
- KTH,Mikrosystemteknik
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- Bleiker, Simon J. (författare)
- KTH,Mikrosystemteknik
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- Haraldsson, Tommy (författare)
- KTH,Mikrosystemteknik
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- Roxhed, Niclas (författare)
- KTH,Mikrosystemteknik
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- Stemme, Göran (författare)
- KTH,Mikrosystemteknik
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- Niklaus, Frank (författare)
- KTH,Mikrosystemteknik
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(creator_code:org_t)
- 2012-08-17
- 2012
- Engelska.
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Ingår i: Journal of Micromechanics and Microengineering. - : Institute of Physics (IOP). - 0960-1317 .- 1361-6439. ; 22:10, s. 105001-
- Relaterad länk:
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http://iopscience.io...
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https://kth.diva-por... (primary) (Raw object)
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http://kth.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Through-silicon via (TSV) technology enables 3D-integrated devices with higher performance and lower cost as compared to 2D-integrated systems. This is mainly due to smaller dimensions of the package and shorter internal signal lengths with lower capacitive, resistive and inductive parasitics. This paper presents a novel low-cost fabrication technique for metal-filled TSVs with very high aspect ratios (>20). Nickel wires are placed in via holes of a silicon wafer by an automated magnetic assembly process and are used as a conductive path of the TSV. This metal filling technique enables the reliable fabrication of through-wafer vias with very high aspect ratios and potentially eliminates characteristic cost drivers in the TSV production such as advanced metallization processes, wafer thinning and general issues associated with thin-wafer handling.
Nyckelord
- Electronics packaging
- Silicon wafers
- Wire
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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