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P-Type ZnO materials :
P-Type ZnO materials : Theory, growth, properties and devices
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- Fan, Jincheng (författare)
- KTH,Teknisk materialfysik,School of Materials Science and Engineering, Anhui University of Technology, Maanshan 243002, China
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- Sreekanth, Mahadeva (författare)
- KTH,Teknisk materialfysik,Department of Physics, Amrita Vishwa Vidyapeetham University, Amritapuri Campus, Kollam 690 525, Kerala, India
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Xie, Z. (författare)
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Chang, S.L. (författare)
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- Rao, K. Venkat (författare)
- KTH,Teknisk materialfysik
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(creator_code:org_t)
- Elsevier BV, 2013
- 2013
- Engelska.
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Ingår i: Progress in Materials Science. - : Elsevier BV. - 0079-6425 .- 1873-2208. ; 58:6, s. 874-985
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In the past 10 years, ZnO as a semiconductor has attracted considerable attention due to its unique properties, such as high electron mobility, wide and direct band gap and large exciton binding energy. ZnO has been considered a promising material for optoelectronic device applications, and the fabrications of high quality p-type ZnO and p-n junction are the key steps to realize these applications. However, the reliable p-type doping of the material remains a major challenge because of the self-compensation from native donor defects (VO and Zni) and/or hydrogen incorporation. Considerable efforts have been made to obtain p-type ZnO by doping different elements with various techniques. Remarkable progresses have been achieved, both theoretically and experimentally. In this paper, we discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively. We first discuss the native defects in ZnO. Among the native defects in ZnO, VZn and O i act as acceptors. We then present the theory of p-type doping in ZnO, and summarize the growth techniques for p-type ZnO and the properties of p-type ZnO materials. Theoretically, the principles of selection of p-type dopant, codoping method and XZn-2VZn acceptor model are introduced. Experimentally, besides the intrinsic p-type ZnO grown at O-rich ambient, p-type ZnO (MgZnO) materials have been prepared by various techniques using Group-I, IV and V elements. We pay a special attention to the band gap of p-type ZnO by band-gap engineering and room temperature ferromagnetism observed in p-type ZnO. Finally, we summarize the devices based on p-type ZnO materials.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Metallurgi och metalliska material (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Metallurgy and Metallic Materials (hsv//eng)
Nyckelord
- Band gap engineering; Doping different elements; Exciton-binding energy; Growth techniques; High electron mobility; Hydrogen incorporation; Room temperature ferromagnetism; Self-compensation
- Binding energy; Defects; Electron mobility; Energy gap; Growth (materials); Materials; Optoelectronic devices; Semiconductor doping; Semiconductor quantum wells; Zinc
- Zinc oxide
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- art (ämneskategori)
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