Room Temperature Ferromagnetism and Band Gap Engineering in Mg Doped ZnO RF/DC Sputtered Films

• Mg doped ZnO thin films were prepared by DC/RF magnetron co-sputtering in (Ar+O2) ambient conditions using metallic Mg and Zn targets. We present a comprehensive study of the effects of film thickness on the structural, optical and magnetic properties. Room temperature ferromagnetism was observed in the films and the saturation magnetization (Ms) increases at first as the film's thickness increases and then decreases. The Ms value as high as ∼15.76 emu/cm3 was achieved for the Mg-doped ZnO film of thickness 120 nm. The optical band gap of the films determined to be in the range 3.42 to 3.52 eV.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Metallurgi och metalliska material (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Metallurgy and Metallic Materials (hsv//eng)

Nyckelord

Magnetrons

Metallic films

Ambient conditions

Band gap engineering

Magnetron co-sputtering

Mg-doped ZnO

Room temperature ferromagnetism

Sputtered films

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)