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Sputter profiling o...
Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ions
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- Linnarsson, Margareta K. (författare)
- KTH,Elektronik
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- Svensson, B. G. (författare)
- KTH,Elektronik
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Andersson, T. G. (författare)
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Wang, S. M. (författare)
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Paska, Z. F. (författare)
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(creator_code:org_t)
- 1993
- 1993
- Engelska.
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Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 70-71:1, s. 40-43
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Broadening of Al sputter profiles in AlxGa1-xAs/GaAs structures has been investigated using secondary ion mass spectrometry. The depth profiling was carried out with 32O+2 ions and 40Ar+ ions using net primary energies of 1.8, 2.2, 3.2 and 5.7 keV. The decay lengths of the Al profiles show a pronounced increase with increasing sputtering ion energy caused by ballistic mixing. Moreover, in the O+2 case the λ-values degrade with eroded depth, indicating that beam-induced surface roughening takes place during profiling and in particular, this holds for high x-values. The results are discussed in terms of a semi-empirical model for ion-beam-induced broadening developed by Zalm and Vriezema.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Electronics
- Elektronik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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