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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02432naa a2200349 4500 | |
| 001 | oai:DiVA.org:kth-144813 | |
| 003 | SwePub | |
| 008 | 140429s2012 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-1448132 URI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a kap2 swepub-publicationtype |
| 100 | 1 | a Ding, Z.4 aut |
| 245 | 1 0 | a Effect of edge passivated by hydrogen on the transport properties of finite- size metallic carbon nanotube-based molecular devices |
| 264 | 1 | b Pan Stanford Publishing,c 2012 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20140512 | |
| 520 | a In this chapter, the effect of edge passivated by hydrogen on the electronic and transport properties of the molecular devices of finite-size metallic carbon nanotubes (CNTs) is investigated by using density-functional theory in combination with Green's function method. Three types of hydrogenations are considered for the edge carbon atoms at the two open ends of the CNTs. The calculated energy gap between the highest occupied and the lowest unoccupied molecular orbitals decreases with increasing the length of the CNTs for the three hydrogen-passivated cases, respectively. Nonlinear current-voltage (I-V) curves and quantum conductance have been obtained in all junctions. It is shown that the electronic properties of the finite-size CNTs and the transport properties are sensitive to the passivation types of edge. With increasing the hydrogen passivation concentration of edge carbon atoms, it is indicated that the I-V characteristics have obviously the widening of bandgap and the decreasing of the quantum conductance. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Materialteknik0 (SwePub)2052 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Materials Engineering0 (SwePub)2052 hsv//eng |
| 700 | 1 | a Jiang, Junu KTH,Teoretisk kemi och biologi4 aut0 (Swepub:kth)u1z9v5ig |
| 700 | 1 | a Xing, H.4 aut |
| 700 | 1 | a Shu, H.4 aut |
| 700 | 1 | a Huang, H.4 aut |
| 700 | 1 | a Chen, H.4 aut |
| 700 | 1 | a Lu, W.4 aut |
| 710 | 2 | a KTHb Teoretisk kemi och biologi4 org |
| 773 | 0 | t Advances in Nanodevices and Nanofabricationd : Pan Stanford Publishingg , s. 153-161q <153-161z 9789814364546z 9780429100383 |
| 856 | 4 | u https://doi.org/10.1201/b14791y The book |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-144813 |
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