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Strain balance appr...
Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers
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- Di Benedetto, Luigi (författare)
- KTH,Integrerade komponenter och kretsar
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- Kolahdouz, Mohammadreza (författare)
- KTH,Integrerade komponenter och kretsar
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- Malm, B. Gunnar (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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(creator_code:org_t)
- 2009
- 2009
- Engelska.
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Ingår i: ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. - 9781424443536 ; , s. 101-104
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- This work presents thermal and electrical characterization of SiGe/Si multi-quantum wells (MQWs) with different layer profiles in complete bolometer structures. The thermal property of the bolometers was studied by measuring thermal coefficient of resistivity (TCR) through I-V curves for five temperatures (25, 40, 55, 80 and 100°C) and for four different pixel areas. The results show a strong dependency of TCR on the Si/SiGe layer thickness and the presence of dopant impurity in the MQW. The noise measurements of MQWs were performed carefully by eliminating all external contributions and the noise spectroscopy provided the noise characteristic parameters. The results demonstrate that the noise depends on the geometric size of the MQW and it increases with decreasing of the pixel area. The investigations show the noise level in the bolometer structures is sensitive to any dopant segregation from the contact layers.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Contact layers
- Dopant impurities
- Dopant segregation
- Electrical characterization
- Geometric sizes
- I - V curve
- Layer thickness
- Multiquantum wells
- Noise characteristic
- Noise levels
- Noise measurements
- Noise spectroscopy
- Si/SiGe
- SiGe quantum wells
- SiGe/Si
- Strain balance
- Thermal coefficients
- Thermal properties
- Bolometers
- Electric reactors
- Infrared detectors
- Pixels
- Signal to noise ratio
- Thermal conductivity of solids
- Thermodynamic properties
- Semiconductor quantum wells
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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