onr:"swepub:oai:DiVA.org:kth-15370"
Sökning: onr:"swepub:oai:DiVA.org:kth-15370" > Effects of O-2 diss...
- 1 av 1
- Föregående post
- Nästa post
- Till träfflistan
| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02796naa a2200349 4500 | |
| 001 | oai:DiVA.org:kth-15370 | |
| 003 | SwePub | |
| 008 | 100805s2006 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-153702 URI |
| 024 | 7 | a https://doi.org/10.1149/1.21501562 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Hultquist, Gunnaru KTH,Korrosionslära4 aut0 (Swepub:kth)u1y3z652 |
| 245 | 1 0 | a Effects of O-2 dissociation on a porous platinum coating in the thermal oxidation of GaAs |
| 264 | 1 | b The Electrochemical Society,c 2006 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20100525 | |
| 520 | a A 20-30-nm-thick porous Pt layer has been sputter-coated on a portion of a GaAs sample and subsequently the sample was oxidized at 500 degrees C in O-16(2) followed by O-18-enriched O-2. The oxide formed was characterized by Auger electron spectroscopy, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, all with a lateral resolution of about 100 mu m. Away from the Pt area, a mm-ranged gradually decreasing degree of As oxidation was observed in the outermost oxide layer. In the Pt area, Ga was preferentially oxidized at the oxide/substrate interface producing a five to seven times thicker oxide than in an area without the influence of Pt. A strongly enhanced dissociation rate of O-2 on Pt particles and a subsequent O spillover to adjacent oxide explain the experimental observations. The mm-ranged spillover is believed to take place via fast lateral surface diffusion and results in the observed variation of oxidized As at the gas/oxide interface. In the Pt area, a high concentration gradient of dissociated oxygen across the oxide layer supplies a high flux of dissociated oxygen to the GaAs substrate where Ga is preferentially oxidized. The results clearly demonstrate that both a surface reaction and solid-state diffusion influence the oxidation rate. A localized high effective oxygen (O) activity that spills over to a nearby oxide area is believed to be a general phenomenon that is operating in oxides where a dissociating element such as Pt is present at O-2/oxide interfaces. | |
| 653 | a deuterium | |
| 700 | 1 | a Graham, M. J.4 aut |
| 700 | 1 | a Wee, A. T. S.4 aut |
| 700 | 1 | a Liu, R.4 aut |
| 700 | 1 | a Sproule, G. I.4 aut |
| 700 | 1 | a Dong, Q.4 aut |
| 700 | 1 | a Anghel, C.4 aut |
| 710 | 2 | a KTHb Korrosionslära4 org |
| 773 | 0 | t Journal of the Electrochemical Societyd : The Electrochemical Societyg 153:2, s. G182-G186q 153:2<G182-G186x 0013-4651x 1945-7111 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-15370 |
| 856 | 4 8 | u https://doi.org/10.1149/1.2150156 |
Hitta via bibliotek
- Journal of the Electrochemical Society (Sök värdpublikationen i LIBRIS)
Till lärosätets databas
- 1 av 1
- Föregående post
- Nästa post
- Till träfflistan
Hitta mer i SwePub
- Av författaren/redakt...
- Hultquist, Gunna ...
- Graham, M. J.
- Wee, A. T. S.
- Liu, R.
- Sproule, G. I.
- Dong, Q.
- visa fler...
- Anghel, C.
- visa färre...
- Artiklar i publikationen
- Journal of the E ...
- Av lärosätet
- Kungliga Tekniska Högskolan
Sök utanför SwePub
- Sök vidare i:
- Google Book Search
- Google Scholar
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.
- Copyright © LIBRIS - Nationella bibliotekssystem
- LIBRIS.kb.se
