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Adhesive wafer bond...
Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration
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Niklaus, Frank (författare)
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Kumar, R. J. (författare)
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McMahon, J. J. (författare)
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Yu, J. (författare)
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Lu, J. Q. (författare)
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Cale, T. S. (författare)
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Gutmann, R. J. (författare)
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- The Electrochemical Society, 2006
- 2006
- Engelska.
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 153:4, s. G291-G295
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Wafer-level three-dimensional integration (3D) is an emerging technology to increase the performance and functionality of integrated circuits (ICs), with adhesive wafer bonding a key step in one of the attractive technology platforms. In such an application, the dielectric adhesive layer needs to be very uniform, and precise wafer-to-wafer alignment accuracy (similar to 1 mu m) of the bonded wafers is required. In this paper we present a new adhesive wafer bonding process that involves partially curing (cross-linking) of the benzocyclobutene (BCB) coatings prior to bonding. The partially cured BCB layer essentially does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or any shear forces at the bonding interface. The resultant nonuniformity of the BCB layer thickness after wafer bonding is less than 1% of the average layer thickness, and the wafers shift relative to each other during the wafer bonding process less than 1 mu m (average) for 200 mm diameter wafers. When bonding two silicon wafers using partially cured BCB, the critical adhesion energy is sufficiently high (>= 14 J/m(2)) for subsequent IC processing.
Nyckelord
- level
- precision
- mems
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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