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Numerical analysis ...
Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver
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- Dai, Daoxin (författare)
- KTH,Zhejiang-KTH Joint Research Center of Photonics, JORCEP
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Sheng, Zhen (författare)
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(creator_code:org_t)
- 2007
- 2007
- Engelska.
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Ingår i: Journal of the Optical Society of America. B, Optical physics. - 0740-3224 .- 1520-8540. ; 24:11, s. 2853-2859
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The characteristics of silicon-on-insulator (SOI) ridge waveguides are analyzed by using a cylindrical full-vectorial finite-difference method mode solver with a perfectly-matched layer treatment. First, the single-mode condition for an SOI ridge nanowire with different Si core thicknesses is obtained. The obtained single-mode condition is different from that for the conventional micrometrical SOI ridge waveguides with a large cross section. By adjusting the cross section (the core width and the etching depth), one can have a nonbirefringent SOI ridge nanowire. The analysis on the bending loss of S01 ridge nanowires shows that one can have a relatively small bending radius even with a shallow etching (i.e., a small ratio γ between the etching depth and the total thickness). For example, even when one chooses a small ratio γ= 0.4, one still has a low bending loss with a small bending radius of 15 μm for an SOI nanowire with a thin core h∞= 250 nm, which is very different from a conventional large SOI ridge waveguide.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- Bending radius
- Silicon-on-insulator (SOI) ridge waveguides
- Single-mode condition
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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