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Influence of base-r...
Influence of base-region thickness on the performance of Pnp transistor-VCSEL
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Akram, Muhammad Nadeem (författare)
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- Xiang, Yu (författare)
- KTH,Integrerade komponenter och kretsar
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- Yu, Xingang (författare)
- KTH,Integrerade komponenter och kretsar
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- Zabel, Thomas (författare)
- KTH,Integrerade komponenter och kretsar
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- Hammar, Mattias (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 2014
- 2014
- Engelska.
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Ingår i: Optics Express. - 1094-4087. ; 22:22, s. 27398-27414
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have recently reported a 980nm GaAs-based three terminal Pnp transistor-vertical-cavity surface-emitting laser (TVCSEL) operating at room temperature with optical power up to 1.8mW. However, the current gain beta = Delta I-c/Delta I-b was near zero just before lasing and became negative after the lasing threshold. The main cause of the negative current gain was found to be a gradual and position-dependent forward-biasing (saturation) of the base-collector junction with increasing bias even before lasing threshold. In this article, detailed multi-physics device simulations are performed to better understand the device physics, and find ways to avoid the premature saturation of the base-collector junction. We have optimized the thickness of the base region as well as its doping concentration and the location of the quantum wells to ensure that the T-VCSEL is in the active mode throughout its range of operation. That is, the emitter-base junction is forward biased and base-collector junction is reversed biased for sweeping the excess charges out of the base region.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Surface-Emitting Laser
- Bipolar-Transistor
- Operation
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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