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AlGaAs/GaAs/InGaAs ...
AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
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- Xiang, Yu (författare)
- KTH,Integrerade komponenter och kretsar
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- Reuterskiöld-Hedlund, Carl (författare)
- KTH,Integrerade komponenter och kretsar
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- Yu, Xingang (författare)
- KTH,Integrerade komponenter och kretsar
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visa fler...
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- Yang, Chen (författare)
- KTH,Integrerade komponenter och kretsar
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- Zabel, Thomas (författare)
- KTH,Integrerade komponenter och kretsar
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- Hammar, Mattias (författare)
- KTH,Integrerade komponenter och kretsar
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visa färre...
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(creator_code:org_t)
- Engelska.
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection to improve the lateral feeding.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- vet (ämneskategori)
- ovr (ämneskategori)